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Infineon HEXFET Type P-Channel MOSFET 20 V, 2.6 A, Enhancement Mode, 3-Pin SOT-23 IRLML2246TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML2246TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 236mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Key Features
- High continuous drain current rating of 2.6 A for reliable performance.
- Low maximum drain-source resistance of 236 milliohms reduces conduction losses.
- Operates with a maximum drain-source voltage of 20 V suitable for low voltage circuits.
- Compact surface-mount SOT-23 package dimensions (3.04mm x 1.4mm x 1.02mm) enable space-saving PCB layouts.
- Typical gate charge of 2.9 nanocoulombs enables fast switching speeds.
- Wide operating temperature range from -55°C to 150°C for robust industrial use.
- Maximum power dissipation of 1.3 W supports efficient thermal management.
- Enhanced HEXFET design provides low gate-to-source voltage and high switching efficiency.
Product Description
Infineon IRLML2246TRPBF is a high-quality P-Channel Power MOSFET designed for surface mount applications. Featuring a continuous drain current of 2.6 A and a maximum drain-source voltage of 20 V, it is suited for various power switching and amplification tasks in electronic circuits.
This HEXFET device uses enhancement mode technology providing improved efficiency and lower conduction loss, which contributes to superior system performance in industrial, automotive, and consumer electronics applications.
The device comes in a compact 3-pin SOT-23 package with dimensions 3.04 mm length, 1.4 mm width, and 1.02 mm height, making it suitable for dense PCB designs requiring space optimization.
With a typical gate charge of 2.9 nC at Vgs, this MOSFET supports fast switching speeds necessary for PWM control and DC-DC converter circuits. Its operating temperature range extends from -55°C to 150°C, ensuring reliable operation in harsh environmental conditions.
Additional attributes include a maximum power dissipation of 1.3 W and a forward voltage of -1.2 V, contributing further to energy efficient circuit design and thermal reliability.
Infineon's semiconductor portfolio focuses on delivering advanced power solutions, and the IRLML2246TRPBF is a part of their HEXFET series known for quality, efficiency, and reliability in electronic power management.
High continuous drain current rating of 2.6 A for reliable performance. Low maximum drain-source resistance of 236 milliohms reduces conduction losses. Operates with a maximum drain-source voltage of 20 V suitable for low voltage circuits.
Compact surface-mount SOT-23 package dimensions (3.04mm x 1.4mm x 1.02mm) enable space-saving PCB layouts. Typical gate charge of 2.9 nanocoulombs enables fast switching speeds. Wide operating temperature range from -55°C to 150°C for robust industrial use.
Maximum power dissipation of 1.3 W supports efficient thermal management. Enhanced HEXFET design provides low gate-to-source voltage and high switching efficiency.
This MOSFET is suitable for applications in industrial electronics, automotive power systems, consumer electronics power supplies, and other semiconductor-driven power management circuits. Browse more MOSFET components and Infineon products on EnvMart to find compatible power solutions.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 2.6 A.
It operates with a maximum drain-source voltage of 20 V, making it suitable for low voltage circuits.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The typical gate charge at Vgs is 2.9 nanocoulombs, which enables fast switching speeds.
The maximum power dissipation is 1.3 W, supporting efficient thermal management.
It has a wide operating temperature range from -55°C to 150°C, suitable for robust industrial use.
This model features a P-Channel type, operating in enhancement mode.
The maximum gate-source voltage is -12 V to +12 V.
The maximum drain-source resistance is 236 milliohms, which helps reduce conduction losses.
It is suitable for applications in industrial electronics, automotive power systems, and consumer electronics power supplies.
The forward voltage is -1.2 V, contributing to energy-efficient circuit design.
The SOT-23 package has a pin count of 3.
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