onsemi PowerTrench N-Channel MOSFET, 3.3 A, 100 V, Enhancement Mode, 4-Pin SOT-223 FDT86113LZ

The onsemi FDT86113LZ is a PowerTrench® N-Channel MOSFET designed for high-performance power switching and amplification applications. It supports a continuous drain current of 3.3 A and a maximum drain-source voltage of 100 V. Packaged in a 4-pin SOT-223 surface mount device, this MOSFET offers compact size with dimensions of 3.7 mm length, 6.7 mm width, and 1.7 mm height, making it suitable for space-constrained electronic designs.

Operating efficiently in enhancement mode, this transistor ensures low on-resistance at 189 milliohms maximum, contributing to reduced power dissipation up to 2.2 W. Its gate charge of 4.1 nC at rated gate voltage facilitates quick switching, essential for high-frequency power management and switching power supplies.

The device withstands operating temperatures from -55°C to 150°C, ensuring reliability under harsh environments commonly found in industrial and consumer electronics. Its maximum gate-source voltage rating of ±20 V provides robust protection to the gate terminal, enhancing device stability over its operational lifecycle.

Typical forward voltage drop of 1.3 V assures predictable voltage characteristics in circuit applications. With a 4-pin footprint optimized for surface mounting, integration on printed circuit boards is straightforward, allowing for compact and efficient designs.

Common applications of the FDT86113LZ include power supply regulation, DC-DC conversion, load switching, and amplification within electronic circuits used in industrial, commercial, and consumer device contexts.

Designed for surface mounting in electronic circuits with SOT-223 package type. Features enhancement mode operation for efficient switching. Maximum drain-source resistance of 189 milliohms ensures low power losses. Operates reliably between -55°C and 150°C for diverse environments.

Maximum power dissipation rating of 2.2 W supports moderate power applications. Typical gate charge of 4.1 nC enables fast switching speeds. Forward voltage drop approximately 1.3 V under rated conditions. Pin count of 4 facilitates straightforward PCB integration.

High maximum gate-source voltage tolerance of ±20 V safeguards gate integrity. Explore more onsemi semiconductor solutions and MOSFET devices in the Electronics & Electricals category for professional and industrial electronics manufacturing and maintenance.