onsemi PowerTrench N-Channel MOSFET, 3.2 A, 100 V Enhancement Mode, 4-Pin SOT-223 Package FDT86106LZ

onsemi FDT86106LZ PowerTrench N-Channel MOSFET is a highly efficient semiconductor device tailored for electronic and power control applications. It offers a continuous drain current of 3.2 A and a maximum drain source voltage of 100 V, making it suitable for medium power circuits requiring reliable switching performance. The device is housed in a 4-pin SOT-223 surface mount package that ensures compact integration on modern circuit boards.

The enhancement mode channel type provides precise transistor operation and improved control over current flow. Its maximum drain source resistance of 189 mΩ minimizes conduction losses, enhancing energy efficiency in power management systems. The MOSFET handles power dissipation up to 2.2 watts and operates within a wide ambient temperature range from -55°C to 150°C, ensuring durability in demanding industrial, automotive, and consumer electronics environments.

Designed for fast switching, the device features a low typical gate charge of 4.3 nC at Vgs, facilitating high-frequency operation and reducing switching losses. The transistor supports gate voltages between -20 and +20 volts, providing flexibility for various drive circuits. The device’s compact dimensions (3.7 mm length, 6.7 mm width, 1.7 mm height) and the 4-pin configuration make it easy to deploy in space-constrained designs.

Ideal for applications in industrial power control, automotive electronics, consumer devices, and semiconductor manufacturing, the onsemi FDT86106LZ PowerTrench MOSFET delivers robust electrical and thermal performance. Its reliable build ensures high operational stability across different system demands and conditions.

Features a low maximum drain source resistance of 189 milliohms for efficient switching. Operates with a maximum continuous drain current of 3.2 amperes. Supports a maximum drain source voltage of 100 volts for high-voltage applications.

Designed with an enhancement mode channel for precise control and improved performance. Has a maximum power dissipation rating of 2.2 watts ensuring reliable operation. Includes 4 pins arranged in a compact SOT-223 surface mount package for easy PCB integration.

Operates safely in a wide temperature range from -55°C to 150°C. Maximum gate source voltage rating from -20 to +20 volts for robust gate control. Typical gate charge is low at 4.3 nC, enabling fast switching speeds. Compact dimensions measuring 3.7 mm length, 6.7 mm width, and 1.7 mm height optimize board space.

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