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onsemi PowerTrench P-Channel MOSFET 6.7A 12V Enhancement Mode 3-Pin TO-252 FDD306P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD306P |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.7A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Features a PowerTrench series design optimized for enhanced system efficiency.
- Supports continuous drain current up to 6.7 amperes for robust power handling.
- Operates at maximum drain source voltage of 12 volts suitable for low voltage applications.
- Compact TO-252 surface mount package with 3 pins for easy PCB integration.
- Low drain source resistance of 90 milliohms reduces conduction losses significantly.
- Enhancement mode channel type with P-Channel MOSFET configuration.
- Maximum power dissipation rated at 52 watts for reliable thermal performance.
- Wide operating temperature range from -55 to 175 degrees Celsius ensures durability.
Product Description
onsemi FDD306P is a PowerTrench Type P-Channel MOSFET designed for efficient power switching applications. Featuring a maximum continuous drain current of 6.7 amperes and a maximum drain source voltage of 12 volts, this device is optimized for low voltage power management in electronic circuits.
The MOSFET utilizes an Enhancement mode channel with a low maximum drain source resistance of 90 milliohms, significantly reducing conduction losses and improving system efficiency. Packaged in a compact TO-252 3-pin surface mount package measuring 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height, it allows for easy integration on printed circuit boards.
Operating reliably across a wide temperature range from -55°C to 175°C, the FDD306P is suitable for industrial, consumer electronics, and power management applications. It features a typical gate charge of 15 nanocoulombs, enabling fast switching speeds and improved transient response.
The device incorporates a soft reverse recovery body diode with a forward voltage of -1.2 volts, contributing to efficient synchronous rectification and eliminating the need for snubber circuits in power supply designs.
Optimized PowerTrench MOSFET technology for enhanced efficiency. Continuous drain current up to 6.7A allows for robust power handling. Suitable for low voltage applications with 12V drain-source voltage. Compact TO-252 3-pin surface mount package for PCB efficiency.
Low on-resistance reduces power loss during operation. Wide operating temperature range ensures performance in harsh environments. Fast switching enabled by low typical gate charge. Soft body diode improves synchronous rectification and eliminates snubbers.
This PowerTrench P-Channel MOSFET is ideal for use in industrial electronics, power supplies, motor control circuits, and other applications requiring efficient low-voltage switching solutions. onsemi’s portfolio of MOSFETs includes a wide range of voltage and current ratings designed to meet various power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.7 amperes.
It operates at a maximum drain source voltage of 12 volts, making it suitable for low voltage applications.
This model comes in a TO-252 package type with 3 pins, allowing for easy surface mount integration.
The maximum power dissipation for the FDD306P is rated at 52 watts.
It has a typical gate charge of 15 nanocoulombs, which supports fast switching speeds.
The dimensions of this model are 2.39 mm in height, 6.73 mm in length, and 6.22 mm in width.
The FDD306P operates reliably across a wide temperature range from -55°C to 175°C.
This model features an enhancement mode channel type, specifically a P-Channel MOSFET configuration.
The maximum drain source resistance is 90 milliohms, which helps reduce conduction losses.
This MOSFET is ideal for use in industrial electronics, power supplies, motor control circuits, and low-voltage switching solutions.
The forward voltage of the soft reverse recovery body diode is -1.2 volts, aiding in efficient synchronous rectification.
The maximum gate source voltage ratings are -8V and +8V, allowing for flexibility in circuit design.
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