onsemi PowerTrench N-Channel MOSFET 4.3 A 60 V Enhancement 6-Pin SOT-23 FDC5612

onsemi FDC5612 PowerTrench N-Channel MOSFET is an advanced discrete semiconductor device designed for efficient power switching and management. It supports continuous drain currents up to 4.3 A and withstands a maximum drain-source voltage of 60 V. Packaged in a compact 6-Pin SOT-23 surface mount package, this MOSFET facilitates integration into compact circuits used in various industrial, electronic, and power management applications.

The device operates in enhancement mode with a maximum gate-source voltage tolerance from -20 V to +20 V, enabling reliable switching performance under diverse electrical conditions. With a low maximum drain-source resistance of 64 mΩ, it achieves high efficiency and low conduction losses, ideal for power-sensitive electronic designs.

Featuring a maximum power dissipation of 1.6 W, this transistor maintains stable operation within a broad temperature range from -55°C up to 150°C. The typical gate charge of 12.5 nC at the gate-source voltage further emphasizes its suitability for high-speed switching tasks.

Dimensionally, at 3 mm length by 1.7 mm width and 1 mm height, the FDC5612 fits standard surface mount PCB layouts, promoting space-saving designs in compact electronic assemblies. The forward voltage is rated at 1.2 V, enabling efficient current switching with minimal voltage drops.

As part of the PowerTrench series, this MOSFET is optimized to deliver superior performance in consumer electronics, industrial instrumentation, automotive electronic systems, and other power management tasks requiring reliable and efficient switching components.

This MOSFET device supports surface mount applications with a 6-Pin SOT-23 package. It has a maximum continuous drain current of 4.3 A and a drain-source voltage of 60 V. Features a low drain-source resistance of 64 mΩ enhancing conduction efficiency.

Robust operating temperature range from -55°C to 150°C. Typical gate charge of 12.5 nC supporting fast switching applications. Compact dimensions suitable for applications with limited PCB space. Forward voltage of 1.2 V conducive to efficient power delivery.

This product is ideal for electronics, power management, and industrial applications requiring reliable N-Channel MOSFETs. Browse the Electronics & Electricals > Semiconductor > MOSFET category on EnvMart for related high-quality components.