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Infineon OptiMOS 3 N-Channel MOSFET, 180 A, 120 V Enhancement Mode, 7-Pin TO-263 IPB036N12N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.57mm |
| Length | 10.31mm |
| Model | IPB036N12N3GATMA1 |
| Width | 9.45mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 3.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 158nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 180 A enables high current handling.
- Maximum drain-source voltage of 120 V suitable for medium voltage applications.
- Enhancement mode transistor for reliable switching performance.
- 7-pin TO-263 surface mount package for robust thermal management.
- Maximum power dissipation of 300 W supports high power operations.
- Wide operating temperature range from -55°C to 175°C ensures durability in harsh environments.
- Low typical gate charge of 158 nC reduces switching losses for higher efficiency.
- Maximum drain-source resistance of 3.6 mΩ contributes to low conduction losses.
Product Description
The Infineon OptiMOS 3 IPB036N12N3GATMA1 is a high-performance N-Channel MOSFET designed specifically for power management applications requiring up to 180 A continuous drain current and 120 V drain-source voltage. Featuring enhancement mode operation, this transistor is optimized for efficient switching and low conduction losses.
This device is housed in a 7-pin TO-263 surface mount package that provides excellent thermal conduction to support up to 300 W power dissipation, suitable for high-density industrial, automotive, and power conversion solutions.
With a wide operating temperature range extending from -55°C to 175°C, the IPB036N12N3GATMA1 ensures robust performance in harsh or demanding environments, including automotive and industrial sectors. The device also supports a maximum gate-source voltage of ±20 V, providing design flexibility for various driver circuits.
The low typical gate charge of 158 nC helps to minimize switching losses, contributing to higher efficiency in DC-DC converters, motor control, and power supplies. Its low drain-source resistance (Rds(on)) of 3.6 mΩ further improves conduction efficiency, making it ideal for applications demanding high current with minimal power loss.
Maximum continuous drain current of 180 A. Drain-source voltage rating of 120 V. Enhancement mode N-Channel MOSFET. 7-pin TO-263 surface mount package. Maximum power dissipation of 300 W. Operating temperature range from -55°C to 175°C.
Gate charge of 158 nC typical at Vgs. Drain-source resistance of 3.6 mΩ maximum. Gate-source voltage range of -20 V to +20 V. Compact dimensions for efficient PCB layout.
This MOSFET is widely used in industrial power management, automotive electronics, power supply units, and other high-performance electronic circuit applications requiring efficient switching and thermal management.
Explore more Infineon semiconductor solutions and components in the MOSFET category at EnvMart for your industrial and electronic needs.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon OptiMOS 3 IPB036N12N3GATMA1 is 180 A.
This model has a maximum drain-source voltage rating of 120 V, making it suitable for medium voltage applications.
The operating temperature range for this MOSFET extends from -55°C to 175°C, ensuring robust performance in harsh environments.
The typical gate charge for the IPB036N12N3GATMA1 is 158 nC, which helps to minimize switching losses.
The maximum power dissipation for this MOSFET is 300 W, supporting high power operations.
This MOSFET features a maximum drain-source resistance of 3.6 mΩ, contributing to low conduction losses.
The IPB036N12N3GATMA1 is housed in a 7-pin TO-263 surface mount package, which provides excellent thermal management.
The maximum gate-source voltage for this MOSFET is ±20 V, offering design flexibility for various driver circuits.
The dimensions of the IPB036N12N3GATMA1 are 10.31 mm in length, 9.45 mm in width, and 4.57 mm in height.
This model is an N-Channel MOSFET, which is designed for enhancement mode operation.
The IPB036N12N3GATMA1 is widely used in industrial power management, automotive electronics, and power supply units.
The Infineon OptiMOS 3 IPB036N12N3GATMA1 is manufactured in India.
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