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Infineon OptiMOS 3 N-Channel MOSFET 21 A 150 V Enhancement Mode 8-Pin TDSON BSC520N15NS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC520N15NS3GATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 8.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports a maximum continuous drain current of 21 amperes.
- Maximum drain-source voltage rating is 150 volts.
- Features an enhancement mode channel type.
- Equipped with an 8-pin TDSON surface mount package.
- Low maximum drain-source resistance of 52 milliohms ensures high efficiency.
- Maximum power dissipation of 57 watts for robust performance.
- Operating temperature range spans from -55°C to 150°C.
- Typical gate charge at Vgs is 8.7 nanocoulombs.
Product Description
Infineon BSC520N15NS3GATMA1 is a high-performance OptiMOS 3 N-Channel MOSFET designed for advanced power management in industrial and electronic circuits. The device features a maximum continuous drain current of 21 A and a drain-source voltage capability of 150 V. It uses enhancement mode channel technology housed in a compact 8-pin TDSON package suitable for surface mount applications.
This MOSFET delivers excellent efficiency through its low 52 mΩ on-resistance, enabling reduced power losses and enhanced thermal management with a maximum power dissipation rating of 57 W. It is built to operate reliably across a wide temperature range from -55°C up to 150°C, making it suitable for harsh industrial environments.
The device includes a typical gate charge of 8.7 nC at Vgs, allowing for fast switching performance, and it supports gate-source voltages up to ±20 V. Its physical dimensions of 5.35 mm length, 6.1 mm width, and 1.1 mm height ensure easy integration in compact electronic assemblies.
Infineon’s OptiMOS 3 series is known for class-leading power density, efficiency, and cost-effectiveness, making this MOSFET ideal for use in power supplies, motor control, DC/DC converters, and industrial automation applications. Although this device lacks specific automotive standards certification, it meets high-performance requirements in commercial and industrial sectors.
Supports a maximum continuous drain current of 21 amperes. Maximum drain-source voltage rating is 150 volts. Features an enhancement mode channel type. Equipped with an 8-pin TDSON surface mount package. Low maximum drain-source resistance of 52 milliohms ensures high efficiency.
Maximum power dissipation of 57 watts for robust performance. Operating temperature range spans from -55°C to 150°C. Typical gate charge at Vgs is 8.7 nanocoulombs. Maximum gate-source voltage tolerance is ±20 volts. Compact device dimensions optimize PCB space efficiency.
Explore more Infineon MOSFETs and power electronics at EnvMart for superior industrial and electronic component solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 21 amperes.
This MOSFET has a maximum drain-source voltage rating of 150 volts.
It features an enhancement mode channel type.
This model is equipped with an 8-pin TDSON surface mount package.
The maximum power dissipation for this unit is 57 watts.
It operates within a temperature range of -55°C to 150°C.
The typical gate charge at Vgs is 8.7 nanocoulombs.
The physical dimensions are 5.35 mm in length, 6.1 mm in width, and 1.1 mm in height.
This model supports a maximum gate-source voltage tolerance of ±20 volts.
The maximum drain-source resistance is 52 milliohms.
It is suitable for power supplies, motor control, DC/DC converters, and industrial automation applications.
This MOSFET belongs to the OptiMOS 3 series.
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