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Infineon OptiMOS 3 N-Channel MOSFET 50 A 60 V Enhancement 8-Pin TDSON BSC100N06LS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC100N06LS3GATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 17.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Optimized for DC/DC converter applications with fast switching speeds.
- Enhancement mode with low on-resistance RDS(on) of 17.9 mΩ for efficient power management.
- High maximum continuous drain current of 50 A supports heavy load handling.
- Maximum power dissipation of 50 W enables robust thermal performance.
- Compact surface mount TDSON package with 8 pins suitable for space-limited designs.
- Wide operating temperature range from -55°C to 150°C enhances reliability in harsh environments.
- Typical gate charge of 34 nC at Vgs optimizes switching efficiency.
- Maximum gate-source voltage ±20 V ensures device protection under transient conditions.
Product Description
Infineon BSC100N06LS3GATMA1 OptiMOS 3 N-Channel MOSFET is a high-efficiency discrete semiconductor device designed for power management in electronic circuits. Operating at a maximum drain current of 50 A and drain-source voltage of 60 V, it provides excellent performance in DC/DC converters, power supplies, and energy-efficient applications. Packaged in an 8-pin TDSON surface mount package with dimensions 5.35 mm length, 6.1 mm width, and 1.1 mm height, this device offers a compact footprint for integration into dense layouts.
The device features an enhancement mode channel with a low RDS(on) of 17.9 milliohms and a typical forward voltage of 1.2 V, making it ideal for fast switching power supply designs. Its gate charge of 34 nC supports efficient switching speed with minimal losses. The MOSFET supports a broad temperature range from -55°C to 150°C, suitable for industrial, consumer electronics, and automotive power applications (non-AEC-Q101 certified).
Infineon's OptiMOS 3 technology ensures high-speed switching, improved power density, and excellent energy efficiency. This device complies with JEDEC standards and features Pb-free plating for environmental compliance. Its low forward voltage and low on-resistance help reduce heat generation, improving system reliability and longevity.
Optimized for switching mode power supplies (SMPS). Surface mount 8-pin TDSON package for compact designs. High maximum continuous drain current of 50 A suitable for high power applications. Maximum power dissipation rating of 50 W for thermal robustness.
Wide ambient operating temperature range -55°C to 150°C. Low gate charge improves switching efficiency. JEDEC qualified ensuring quality and reliability. Lead-free plating supports environmental compliance.
This MOSFET is suitable for use in industrial electronics, power management modules, telecommunications equipment, computing devices, and general purpose electronic circuits requiring efficient power switches. It is not automotive certified, thus recommended for non-automotive applications.
Explore more Infineon OptiMOS 3 discrete semiconductors and MOSFET products on EnvMart for enhanced power efficiency and design flexibility.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A, allowing it to handle heavy load applications effectively.
The maximum drain-source voltage of this MOSFET is 60 V, making it suitable for various power management applications.
The on-resistance (RDS(on)) of this model is 17.9 mΩ, which contributes to its efficiency in power management.
The typical gate charge at Vgs for this MOSFET is 34 nC, optimizing its switching efficiency.
The dimensions of the TDSON package are 5.35 mm in length, 6.1 mm in width, and 1.1 mm in height, making it compact for space-limited designs.
This model operates within a temperature range of -55°C to 150°C, enhancing its reliability in harsh environments.
The maximum power dissipation rating for this MOSFET is 50 W, which supports robust thermal performance.
This device uses surface mounting, specifically in an 8-pin TDSON package, suitable for compact designs.
The forward voltage (Vf) of this model is 1.2 V, which is relevant for its performance in power applications.
This model is optimized for DC/DC converter applications, power supplies, and energy-efficient applications.
The maximum gate-source voltage for this MOSFET is ±20 V, ensuring device protection under transient conditions.
This model belongs to the OptiMOS 3 series, which is known for high-speed switching and improved power density.
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