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Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin TDSON BSC028N06LS3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.35mm |
| Model | BSC028N06LS3GATMA1 |
| Width | 6.1mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 4.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 139W |
| Typical Gate Charge Qg @ Vgs | 132nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports surface mount technology (SMT) with an 8-pin TDSON package.
- Maximum continuous drain current of 100 amperes.
- Maximum drain-source voltage of 60 volts with enhancement mode operation.
- Low on-resistance of 4.8 milliohms for efficient power conduction.
- Rated maximum power dissipation of 139 watts for high power applications.
- Operating temperature range from -55°C to 150°C for reliability.
- Typical forward voltage of 1.2 volts ensuring low energy loss.
- Optimized gate charge of 132 nanocoulombs at rated gate voltage for fast switching.
Product Description
Infineon BSC028N06LS3GATMA1 OptiMOS 3 N-Channel MOSFET is an advanced power transistor designed to deliver high efficiency and reliability in industrial, automotive, computing, and power management applications.
This device features a 60 V drain-source voltage rating and supports a maximum continuous drain current of 100 A, allowing it to handle demanding power loads efficiently. The surface-mount 8-pin TDSON package facilitates compact PCB layouts, perfectly suited for space-constrained power supplies, motor drives, and DC/DC converters.
The low on-resistance of 4.8 milliohms reduces conduction losses, while the enhancement mode operation provides excellent switching performance. It includes features optimized for fast switching with a typical gate charge of only 132 nanocoulombs, enhancing overall system efficiency and heat management.
The product operates reliably at temperatures from -55°C up to 150°C, making it suitable for harsh industrial environments and automotive use. Key technical benefits include JEDEC qualification compliance and lead-free plating, reflecting environmental friendliness and quality assurance.
Supports surface mount technology (SMT) with an 8-pin TDSON package. Maximum continuous drain current of 100 amperes. Maximum drain-source voltage of 60 volts with enhancement mode operation. Low on-resistance of 4.8 milliohms for efficient power conduction.
Rated maximum power dissipation of 139 watts for high power applications. Operating temperature range from -55°C to 150°C for reliability. Typical forward voltage of 1.2 volts ensuring low energy loss. Optimized gate charge of 132 nanocoulombs at rated gate voltage for fast switching.
Complies with JEDEC qualification standards suitable for DC/DC converters. Lead-free plating to meet environmental standards.
This Infineon OptiMOS 3 MOSFET series product is ideal for industrial power electronics, electronic component manufacturing, and computing applications requiring efficient voltage regulation and power density optimisation.
Browse EnvMart's extensive Semiconductor catalog for other Infineon power components and advanced MOSFET solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It features a low on-resistance of 4.8 milliohms, which aids in efficient power conduction.
The operating temperature range is from -55°C to 150°C, making it suitable for various environments.
This unit comes in an 8-pin TDSON package, supporting surface mount technology (SMT).
The typical gate charge at rated gate voltage is 132 nanocoulombs.
It has a rated maximum power dissipation of 139 watts, suitable for high power applications.
The typical forward voltage is 1.2 volts, which helps ensure low energy loss.
The dimensions are 5.35 mm in length, 6.1 mm in width, and 1.1 mm in height.
This model features an N-channel configuration with enhancement mode operation.
Yes, it complies with JEDEC qualification standards and features lead-free plating to meet environmental standards.
It is designed for use in industrial, automotive, computing, and power management applications requiring efficient voltage regulation.
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