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Infineon OptiMOS-T N-Channel MOSFET, 30 A, 100 V Enhancement Mode, 3-Pin TO-252 IPD30N10S3L34ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.3mm |
| Length | 6.5mm |
| Model | IPD30N10S3L34ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | OptiMOS-T |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Enhanced energy efficiency with OptiMOS-T series design.
- High maximum power dissipation of 57 W supports robust operation.
- Surface mount package TO-252 with three pins for easy PCB integration.
- Automotive AEC-Q101 qualified for reliable automotive use.
- Wide operating temperature range from -55°C to 175°C for tough environments.
- Low on-resistance of 42 mΩ reduces power loss and heat generation.
- Typical gate charge of 24 nC ensures fast switching performance.
- Green product complying with RoHS directives.
Product Description
The Infineon IPD30N10S3L34ATMA1 MOSFET is a high-quality N-channel enhancement mode device in the OptiMOS-T series, designed for efficient power management and voltage regulation applications. With a maximum continuous drain current of 30 A and drain-source voltage rating of 100 V, it delivers reliable performance for demanding electronic circuits.
This MOSFET features a surface mount TO-252 package with three pins, allowing for convenient integration into printed circuit boards. It supports efficient switching with a typical gate charge of 24 nC and low maximum drain-source resistance of 42 mΩ, minimizing conduction losses and improving overall system efficiency.
Certified to the automotive industry standard AEC-Q101, the device ensures durability and reliability in automotive and industrial environments. It operates over a wide temperature range from -55°C up to 175°C, making it suited for harsh conditions.
The maximum power dissipation of 57 W enables this component to handle significant power without degrading performance. The MOSFET is RoHS-compliant, meeting environmental standards for green electronics manufacturing.
Its compact dimensions - 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height - allow use in space-constrained applications such as computing power supplies, battery management systems, telecommunications equipment, and automotive electronics.
Enhanced energy efficiency with OptiMOS-T technology. High current handling capability of 30 A continuous drain current. Robust voltage rating of 100 V maximum drain-source voltage. Industrial and automotive grade reliability certified by AEC-Q101.
Wide temperature tolerance for diverse applications. Low resistance helps minimize heat dissipation. Compact 3-pin TO-252 surface mount package for easy assembly. Compliant with RoHS environmental standards. Suitable for power management in automotive, industrial, and consumer electronics.
Explore our Infineon semiconductor range to find compatible MOSFETs and enhance your designs with reliable, high-efficiency components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 A.
It has a maximum drain-source voltage rating of 100 V.
This MOSFET comes in a TO-252 package type with three pins.
The typical gate charge is 24 nC, which supports fast switching performance.
The maximum power dissipation is 57 W, allowing it to handle significant power.
It operates over a wide temperature range from -55°C to 175°C.
Yes, it is certified to the automotive industry standard AEC-Q101, ensuring reliability in automotive use.
The maximum drain-source resistance is 42 mΩ, which helps reduce power loss.
The dimensions are 6.5 mm in length, 6.22 mm in width, and 2.3 mm in height.
This model features an N-channel enhancement mode.
It is RoHS-compliant, meeting environmental standards for green electronics manufacturing.
It is suitable for power management in automotive, industrial, and consumer electronics.
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