Infineon CoolMOS C6 N-Channel MOSFET 77 A 650 V Enhancement 3-Pin TO-247 IPW60R041C6FKSA1

Infineon IPW60R041C6FKSA1 is a CoolMOS C6 series N-Channel MOSFET designed for high-efficiency power applications. It features a 3-pin TO-247 package suitable for through-hole mounting, offering robust mechanical and thermal stability.

With a maximum continuous drain current of 77 A and a drain-source voltage of 650 V, this enhancement mode MOSFET efficiently handles high current and voltage demands in power conversion circuits, motor drives, and industrial power supplies.

The low maximum drain-source resistance of 41 milliohms minimizes conduction losses, enhancing power efficiency. The device supports a maximum power dissipation of 481 W, promoting stable operation under demanding thermal conditions. Typical gate charge of 290 nC allows for faster switching speeds, improving overall system performance.

This MOSFET operates reliably in a wide temperature range from -55°C to 150°C, meeting the requirements of harsh industrial and electronic environments. Forward voltage drop typically measures 900 mV ensuring optimized switching performance.

The IPW60R041C6FKSA1 from Infineon is ideal for use in industrial electronics, power management modules, motor control systems, and discrete semiconductor applications requiring high power density and efficiency.

Maximum continuous drain current of 77 A. Rated drain-source voltage of 650 V. Enhancement mode N-Channel device. 76 mΩ maximum Rds(on) resistance. TO-247 package with 3 pins for through-hole mounting. Operating temperature range of -55°C to 150°C.

Forward voltage of 900 mV. Maximum power dissipation of 481 W. Explore more Infineon MOSFETs and power semiconductor devices at EnvMart for reliable industrial and electronic solutions.