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Infineon SIPMOS Type P-Channel MOSFET 330mA 60V Enhancement Mode 3-Pin SOT-23 BSS83PH6327XTSA1

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Infineon SIPMOS Type P-Channel MOSFET 330mA 60V Enhancement Mode 3-Pin SOT-23 BSS83PH6327XTSA1

Name: Infineon SIPMOS Type P-Channel MOSFET 330mA 60V Enhancement Mode 3-Pin SOT-23 BSS83PH6327XTSA1
Brand: Infineon
SKU: 364021
Price: 0.13 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	2.9mm
Model	BSS83PH6327XTSA1
Width	1.3mm
Mount Type	Surface
Series	SIPMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	330mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	3Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	360mW
Typical Gate Charge Qg @ Vgs	2.38nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.1V

Key Features

Maximum continuous drain current of 330 mA suitable for small-signal switching.
Drain source voltage rating of 60 V accommodates higher voltage circuits.
Enhancement mode with 3 Ω maximum drain source resistance minimizing conduction losses.
Typical gate charge of 2.38 nC ensures fast switching performance.
Wide operating temperature range from -55°C to 150°C supports automotive-grade applications.
Compact SOT-23 surface-mount package enables dense PCB layouts.
AEC-Q101 automotive standard qualification guarantees reliability under automotive conditions.
Maximum power dissipation rated at 360 mW avoids thermal overload in typical use cases.

Product Description

Infineon BSS83PH6327XTSA1 SIPMOS Type P-Channel MOSFET is a compact surface-mount device designed for efficient low-current switching applications up to 60 V and 330 mA. This enhancement-mode MOSFET features a 3-Pin SOT-23 package making it ideal for dense printed circuit board layouts requiring reliable power control.

With a maximum drain source resistance of 3 Ω, this device ensures low conduction losses during operation. The typical gate charge of 2.38 nC reduces gate-drive energy consumption, enabling faster switching speeds which are beneficial in pulse or low-frequency power stages.

The MOSFET supports a wide operating temperature range from -55°C to 150°C, making it suitable for automotive and industrial environments that experience large thermal extremes. Its AEC-Q101 qualification underscores its compliance with automotive reliability standards.

The device can be used in various applications including battery-management systems, load-disconnect circuits, automotive sensor signal switching, low-power regulators, power-rail switching, and polarity-reverse protection in compact electronic devices.

The SOT-23 package facilitates automated placement and improved thermal conduction on PCB assemblies. Its maximum power dissipation rating of 360 mW must be factored into thermal design considerations to prevent overheating during operation.

Maximum continuous drain current of 330 mA for small-signal switching needs. Drain-source voltage rating of 60 V for high voltage switching compatibility. Enhancement mode with low on-resistance of 3 Ω reduces power loss.

Fast switching enabled by 2.38 nC typical gate charge at Vgs. Wide temperature range (-55°C to 150°C) suitable for automotive use. Compact, surface-mount SOT-23 package designed for high-density PCB assembly. AEC-Q101 automotive qualification ensures durability and reliability.

Maximum power dissipation of 360 mW for effective thermal management. Forward voltage of -1.1 V supports efficient switching operations. Ideal for signal switching, battery management, and load-disconnect circuits. Explore full details and options in the MOSFET category at EnvMart.