Infineon SIPMOS Type P-Channel MOSFET, 330 mA, 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1

Infineon BSS83PH6327XTSA1 SIPMOS Type P-Channel MOSFET offers a reliable solution for compact power control in electronic and automotive systems. This enhancement-mode MOSFET is designed for surface-mount assembly with a space-saving 3-Pin SOT-23 package ensuring efficient use of PCB real estate.

Its 60 V maximum drain-source voltage capability supports higher-voltage switching scenarios, while the continuous drain current of 330 mA meets the requirements of small-signal switching in battery-management and load-disconnect circuits.

The device's low maximum drain-source resistance of 3 Ω improves conduction efficiency by reducing power losses during operation. The typical gate charge of 2.38 nC allows for fast gate transitions, reducing the energy required from the driver circuitry. The maximum gate-source voltage range of -20 V to +20 V provides design flexibility for different gate drive levels.

Infineon's stringent automotive standard AEC-Q101 qualification certifies the MOSFET for usage in automotive sensor interfaces and power rail switching stages, withstanding extreme temperature ranges from -55°C cold starts to 150°C high-temperature conditions without performance degradation.

Applications include battery-management systems, polarity-reverse protection circuits, and various low-power signal switching roles. The compact SOT-23 package is compatible with automated placement technology, enabling efficient mass production and reliable thermal conduction.

Continuous drain current of 330 mA supports low-power switching applications. Maximum drain-source voltage rating of 60 V for high-voltage designs. Enhancement channel operation ensures reliable switching control. SOT-23 package enables compact, surface-mounted PCB integration.

Thermal dissipation rated at 360 mW requires adequate heat management. Gate charge of 2.38 nC allows for improved switching speeds. Wide gate-source voltage tolerance from -20 V to +20 V. Certified for automotive environments with AEC-Q101 standard.

Operates over a broad temperature range from -55°C to 150°C. Low drain-source resistance minimizes conduction losses.

For engineers and designers working in automotive electronics, industrial controls, or compact power circuits, the Infineon BSS83PH6327XTSA1 delivers a high-reliability, efficient MOSFET option. Explore more electronic components and semiconductors at EnvMart to enhance your system designs.