Infineon SIPMOS Type P-Channel MOSFET, 430 mA, 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1

Infineon BSP317PH6327XTSA1 is a SIPMOS Series P-Channel Enhancement MOSFET designed for use in high-voltage switching applications. This device operates at a maximum continuous drain current of 430 mA and supports a maximum drain-source voltage of 250 V, making it well-suited for automotive and industrial environments requiring reliable switching and power management.

Its low maximum drain-source resistance of 5 ohms reduces conduction losses in low current circuits, improving efficiency. The device features a relatively low typical gate charge of 11.6 nC, facilitating reduced switching energy loss and optimized gate drive performance. This MOSFET operates reliably within a broad temperature range from -55°C to 150°C, handling both cold and hot environmental conditions pertinent to automotive and industrial applications.

The BSP317PH6327XTSA1 comes in a surface-mount SOT-223 package, which provides an effective thermal path through PCB copper to enhance heat dissipation with appropriate board heatsinking. Its four-pin configuration supports straightforward mounting and integration into compact circuit designs.

Automotive-grade reliability is ensured with AEC-Q101 qualification, meeting stringent stress and quality standards. The MOSFET’s enhancement channel mode and gate-to-source voltage tolerance of ±20 V require careful gate driver design to avoid over-voltage conditions.

Typical applications include automotive power distribution, load switching, high-voltage reverse battery protection, accessory power modules in vehicles and machinery, as well as signal switching and industrial control scenarios. This MOSFET is ideal for compact surface-mount power conversion boards requiring dependable performance and durability.

Maximum continuous drain current: 430 mA. Maximum drain-source voltage: 250 V. Low Rds(max): 5 ohms reduces conduction losses. Typical gate charge: 11.6 nC minimizes switching losses. Operating temperature range: -55°C to 150°C.

SOT-223 surface-mount package for easy mounting. AEC-Q101 qualified for automotive use. 4-pin configuration for optimized connection. Enhancement channel mode. Gate-source voltage max: ±20 V. Explore more Infineon MOSFETs and semiconductor products in the Electronics & Electricals category for advanced industrial and automotive solutions.