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Infineon SIPMOS Type P-Channel MOSFET, 250 V, 430 mA, Enhancement Mode, 4-Pin SOT-223 BSP317PH6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | BSP317PH6327XTSA1 |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 430mA |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 11.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- The device features enhancement mode channel operation for efficient switching.
- Packaged in a compact 4-pin SOT-223 surface-mount package for easy PCB integration.
- Maximum drain-source resistance is 5Ω, reducing conduction losses in low current scenarios.
- Gate charge of 11.6nC at Vgs balances fast switching with low energy loss.
- Wide operating temperature range from -55°C to 150°C, suitable for automotive and industrial environments.
- Compliant with AEC-Q101 automotive standard for component reliability under stress.
- Maximum power dissipation of 1.8 W supports steady state operation.
Product Description
Infineon BSP317PH6327XTSA1 SIPMOS Type P-Channel MOSFET is engineered for high voltage switching in industrial and automotive applications. With a maximum drain-source voltage of 250 V and continuous drain current rating of 430 mA, this enhancement mode MOSFET delivers reliable performance in compact surface-mount assemblies.
The 4-pin SOT-223 package facilitates robust board mounting and efficient thermal dissipation. Its maximum drain-source resistance of 5Ω minimizes conduction losses, which is critical in low current switching circuits. The typical gate charge of 11.6 nC at a gate-source voltage of 20 V ensures efficient switching with reduced energy loss.
Designed to withstand a harsh thermal environment, it operates reliably from -55°C up to 150°C, making it well-suited for automotive power distribution, load switching, and industrial control systems. The MOSFET meets the AEC-Q101 standard, affirming its suitability for automotive stress levels.
Applications include automotive reverse battery protection circuits, accessory power modules in vehicles and machinery, and surface-mount power conversion boards. The device features enhancement mode channel operation for efficient switching.
Compact 4-pin SOT-223 surface mount package with thermal path through PCB copper. 5Ω maximum drain-source resistance ensures low conduction losses. Gate charge of 11.6 nC lowers switching energy losses. Operating temperature range from -55°C to 150°C suits automotive and industrial use.
Complies with AEC-Q101 automotive standard. Maximum power dissipation of 1.8 W supports stable operation. Dimensions: 6.5 mm length, 3.5 mm width, 1.6 mm height.
Choose Infineon MOSFETs for dependable performance in automotive, industrial, laboratory and manufacturing applications. Browse the EnvMart catalog for related semiconductors and discrete electronic components.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 250 V.
It has a continuous drain current rating of 430 mA.
The maximum power dissipation is 1.8 W, supporting stable operation.
This model is packaged in a 4-pin SOT-223 surface mount package, with dimensions of 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.
The typical gate charge at a gate-source voltage of 20 V is 11.6 nC.
The maximum drain-source resistance is 5Ω, which helps to minimize conduction losses.
It operates reliably within a temperature range from -55°C to 150°C.
This model complies with the AEC-Q101 automotive standard, ensuring reliability under stress.
It features a Type P channel, which is designed for enhancement mode operation.
This device is designed for surface mounting, facilitating easy PCB integration.
It is suitable for applications such as automotive reverse battery protection circuits and accessory power modules in vehicles and machinery.
The maximum gate-source voltage is -20 V to +20 V.
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