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Infineon SIPMOS N-Channel MOSFET, 260 mA, 240 V Enhancement, Surface Mount SOT-89 Package BSS87H6327FTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.5mm |
| Length | 4.5mm |
| Model | BSS87H6327FTSA1 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | SIPMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 260mA |
| Maximum Drain Source Voltage Vds | 240V |
| Maximum Drain Source Resistance Rds | 7.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This enhancement-mode MOSFET supports a maximum continuous drain current of 260 mA.
- Maximum drain-to-source voltage rating is 240 V, suitable for high-voltage switching.
- Housed in a 3-pin SOT-89 package with surface mount mounting for compact board designs.
- Maximum power dissipation is 1 W, enabling moderate thermal loads without external heatsinking.
- Features a maximum drain-source resistance of 7.5 Ω to reduce conduction losses.
- Typical gate charge of 3.7 nC allows predictable switching energy management.
- Operates reliably over a temperature range from -55 °C to 150 °C.
- Meets automotive-grade AEC-Q101 qualification, ideal for vehicle electronic control circuits.
Product Description
Infineon BSS87H6327FTSA1 is a SIPMOS series enhancement-mode N-channel MOSFET designed for surface mount applications requiring reliable high voltage and temperature endurance. Rated for 260 mA continuous drain current and 240 V maximum drain-source voltage, this device is intended for auxiliary automotive control circuits and industrial signal-level switching.
The device is housed in a small 3-pin SOT-89 package with surface mount mounting, measuring 4.5 x 2.5 x 1.5 mm, enabling compact PCB footprint without the need for additional heatsinking for low-power applications. With a maximum power dissipation of 1 W, it can handle modest thermal loads efficiently.
A maximum drain-source resistance of 7.5 Ω helps reduce conduction losses at low currents, while the typical gate charge of 3.7 nC provides controlled switching energy, making it suitable for integration with driver ICs in power-limited converters.
Operating temperatures from -55 °C to 150 °C allow deployment in harsh automotive under-bonnet environments or industrial settings. The device complies with automotive AEC-Q101 standards, guaranteeing quality and reliability for vehicle electronic subsystems.
Common applications include battery management sensing, auxiliary control circuits in vehicles, signal-level high-voltage switching in industrial electronics, and compact prototypes requiring surface mount discrete semiconductors.
This MOSFET supports reliable high-voltage switching with 240 V drain capability. It offers moderate power handling with 1 W maximum power dissipation. The device's compact SOT-89 package is ideal for space-constrained PCB designs.
Designed for automotive qualification, enhancing system reliability and quality. Applications span automotive, industrial, and prototype electronics requiring efficient switching devices. Explore our extensive catalog of MOSFETs and discrete semiconductors for diverse electronic component needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 260 mA.
It has a maximum drain-to-source voltage rating of 240 V, suitable for high-voltage applications.
This device is housed in a SOT-89 package, with dimensions of 4.5 mm in length, 2.5 mm in width, and 1.5 mm in height.
The maximum power dissipation is 1 W, allowing it to handle moderate thermal loads without external heatsinking.
The typical gate charge is 3.7 nC, which aids in predictable switching energy management.
It operates reliably over a temperature range from -55 °C to 150 °C.
This model complies with the automotive-grade AEC-Q101 qualification.
This device has a pin count of 3, suitable for surface mount applications.
The maximum drain-source resistance is 7.5 Ω, which helps reduce conduction losses.
This model is an N-channel enhancement-mode MOSFET.
Common applications include battery management sensing, auxiliary control circuits in vehicles, and signal-level high-voltage switching in industrial electronics.
The maximum gate-source voltage rating for this device is -20 V to +20 V.
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