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Infineon OptiMOS N-Channel MOSFET, 300mA Continuous Drain Current, 60V Drain-Source Voltage, 3-Pin SOT-23 2N7002H6327XTSA2

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Infineon OptiMOS N-Channel MOSFET, 300mA Continuous Drain Current, 60V Drain-Source Voltage, 3-Pin SOT-23 2N7002H6327XTSA2

Name: Infineon OptiMOS N-Channel MOSFET, 300mA Continuous Drain Current, 60V Drain-Source Voltage, 3-Pin SOT-23 2N7002H6327XTSA2
Brand: Infineon
SKU: 363899
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1mm
Length	2.9mm
Model	2N7002H6327XTSA2
Width	1.3mm
Mount Type	Surface
Series	OptiMOS
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	4Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	0.4nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

Operates within a wide temperature range from -55°C to 150°C.
Compact 3-pin SOT-23 package eases board layout and placement.
Low 4Ω maximum drain-source resistance reduces conduction losses.
Typical gate charge of 0.4nC enables rapid switching transitions.
Supports maximum power dissipation of 500mW for thermal management.
Enhancement mode device suitable for controlled conduction in low-current circuits.
Provides flexible gate drive voltage tolerance of -20V to +20V.
Ideal for level shifting and signal switching in control and sensor interface circuits.

Product Description

Infineon 2N7002H6327XTSA2 OptiMOS N-Channel MOSFET offers efficient switching performance with a maximum continuous drain current of 300mA and a drain-source voltage rating of 60V. Designed in a compact 3-pin SOT-23 surface-mount package measuring 2.9 x 1.3 x 1 mm, it is optimized for high-speed switching applications in electronic circuits.

This enhancement mode MOSFET features a maximum drain-source resistance of 4Ω, enabling reduced conduction losses at low currents. Its typical gate charge of 0.4nC ensures rapid gate transitions, supporting swift switching operations in low-power devices. The device withstands gate-source voltages from -20V to +20V, providing versatility in gate drive voltage applications.

Operating temperature ranges from -55°C up to 150°C allow the MOSFET to function reliably in harsh environments. With a power dissipation capacity of 500mW, it accommodates moderate thermal loads within compact PCB layouts.

This MOSFET is suitable for numerous industrial and commercial uses including level shifting and signal switching in control units, battery-powered sensor interface circuits, small relay driving, transistor-replacement switching, and protection circuitry in consumer electronics. It supports compact power-management module designs on circuit boards.

The component’s small surface-mount footprint simplifies placement on densely populated PCBs, efficiently utilizing board space. Its three-pin configuration aligns with single-channel MOSFET topologies for easy routing and schematic integration.

High voltage (60V) drain-source rating for elevated voltage switching. Low on-resistance reduces power losses. Compact SOT-23 package for space-efficient applications. Wide temperature operation enhances reliability in demanding conditions.

Rapid switching enabled by low gate charge. Suitable for control, sensor interface, switching, and power management applications. Explore more Infineon OptiMOS MOSFETs for your industrial, automotive, and consumer electronic design needs at EnvMart.