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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | DMP2240UDM-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-26 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 240mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 600mW |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -0.9V |
| Transistor Configuration | Isolated |
DiodesZetex DMP2240UDM-7 Isolated 2 Type P-Channel Small Signal MOSFET provides a dual transistor configuration designed for surface mount applications, delivering up to 2 A maximum continuous drain current and 20 V maximum drain-source voltage. This enhancement mode MOSFET features a 6-pin SOT-26 package that is compact and suitable for use in automated assembly.
With a maximum power dissipation rating of 600 mW and an operating temperature range from -65°C to +150°C, the device is highly reliable for industrial, automotive, and electronic equipment applications. Its maximum drain-source resistance of 240 milliohms facilitates efficient switching performance, while forward voltage rating of -0.9 V supports optimized small signal processing. The gate-source voltage rating of -12 V to +12 V provides flexible biasing suitable for a variety of circuit requirements.
Designed under strict quality standards including AEC-Q101 automotive certification, RoHS compliance, MIL-STD-202, J-STD-020, and UL 94V-0 flame resistance, the MOSFET ensures durability and safety in harsh environments.
The device measures 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height, making it ideal for use in densely packed circuit boards requiring surface mount technology. Its isolated dual P-channel configuration allows for efficient signal isolation and switching in electronic and power management systems.
This MOSFET is well suited for automotive electronics, power management, consumer electronics, and industrial control circuits. Its compact size and surface mountability assist in miniaturizing devices without compromising performance.
The product is manufactured in China with adherence to international quality and safety standards. Ideal for use in signal amplification, switching, and load driving applications. Package includes dual P-channel MOSFET transistors for enhanced efficiency in design.
Explore our extensive range of semiconductors and MOSFET devices at EnvMart for industrial, automotive, and electronic component needs.
Explore more products in our Discrete Semiconductors category.
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