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DiodesZetex N-Channel MOSFET 230 mA 20 V Enhancement 3-Pin SC-89 DMN26D0UT-7

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DiodesZetex N-Channel MOSFET 230 mA 20 V Enhancement 3-Pin SC-89 DMN26D0UT-7

Name: DiodesZetex N-Channel MOSFET 230 mA 20 V Enhancement 3-Pin SC-89 DMN26D0UT-7
Brand: DiodesZetex
SKU: 363613
Price: 0.08 USD
Availability: InStock

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Category Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	800μm
Length	1.7mm
Model	DMN26D0UT-7
Width	850μm
Mount Type	Surface
Series	DMN
Maximum Operating Temperature	150°C
Package Type	SC-89
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	230mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	15Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Typical Gate Charge Qg @ Vgs	12.9nC
Maximum Gate Source Voltage Vgs	-10, +10V
Forward Voltage Vf	-1.5V

Key Features

This enhancement mode MOSFET provides reliable performance for low power switching applications.
The device features a maximum power dissipation of 300 mW suitable for compact circuits.
Its small form factor dimensions are 1.7 mm length, 850 μm width, and 800 μm height.
Designed for surface mount applications with 3 pins for easy PCB integration.
Operates in a temperature range from -55°C to 150°C, meeting AEC-Q101 automotive standard.
Maximum gate-source voltage allowed is ±10 V ensuring robust driving capability.
The device includes a typical gate charge of 12.9 nC at Vgs.
Drain-source resistance is rated maximum at 15 Ohms, suitable for low current switching.

Product Description

DiodesZetex DMN26D0UT-7 is a discrete N-channel MOSFET transistor designed for efficient switching in low power electronic circuits. It delivers a maximum continuous drain current of 230 mA with a maximum drain-source voltage of 20 V. Packaged in a compact 3-pin SC-89 package, this device is suitable for surface mount applications requiring minimal PCB footprint.

The transistor operates as an enhancement mode device, providing reliable switching at maximum power dissipation of 300 mW. Its electrical characteristics include a typical gate charge of 12.9 nC at Vgs and a maximum drain-source resistance of 15 Ω, ideal for low power load switching and signal amplification.

Physical dimensions of the MOSFET are compact, with length 1.7 mm, width 850 μm, and height 800 μm, supporting miniaturized compact module design and integration on modern PCBs.

This component supports a wide operating temperature range from -55°C minimum to 150°C maximum, meeting the stringent AEC-Q101 automotive standard for quality and reliability in automotive and industrial environments.

Its maximum gate-source voltage of ±10 V permits flexible driving voltages without damage to the gate oxide. The forward voltage rating is -1.5 V. Enhancement mode N-Channel MOSFET suitable for semiconductor discrete applications.

Surface mount 3-pin SC-89 package for efficient PCB space utilization. Maximum continuous drain current of 230 mA at 20 V maximum voltage. Robust operation temperature range and compliance with automotive standard AEC-Q101.

Designed for use in industrial, electronic component manufacturing, prototyping and repair. This product is manufactured in China with high quality standards. Explore more Semiconductor components in the MOSFET category at EnvMart for your electronic design and manufacturing needs.