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DiodesZetex Small Signal PNP Transistor BC857A-7-F, -100 mA, -45 V, 3-Pin SOT-23 Package

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BC857A-7-F
Width 2.5mm
Mount Type Surface
Series BC857A
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q200
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • This transistor offers a minimum DC current gain (hFE) of 125.
  • Maximum power dissipation is rated at 300 mW for reliable operation.
  • It operates within a temperature range from -55°C to 150°C.
  • Pin count is 3, facilitating easy surface mount device integration.
  • Package dimensions are compact with length 3 mm, width 2.5 mm, and height 1.1 mm.
  • Designed for single transistor configuration with PNP polarity.
  • Supports automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.
  • Suitable for various industrial electronics applications requiring small signal amplification.

Product Description

DiodesZetex BC857A-7-F small signal PNP transistor offers robust performance in discrete semiconductor applications. This device features a surface mount SOT-23 package with three pins, designed for compact electronic circuits requiring efficient switching and amplification within low to moderate power ranges.

It supports a maximum DC collector current of -100 mA and can tolerate a collector-emitter voltage of -45 V, making it suitable for a wide range of electronic and industrial uses. The transistor configuration is single and PNP polarity, optimized for signal processing and switching functions.

The transistor’s minimum DC current gain (hFE) of 125 ensures effective amplification, while the maximum power dissipation is capped at 300 mW, supporting reliable thermal management. Compact physical dimensions of 3 mm length, 2.5 mm width, and 1.1 mm height facilitate use in highly space-constrained PCB layouts.

This component also withstands operating temperatures from -55°C up to 150°C, suitable for demanding environmental conditions. Its design meets key automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, ensuring durability and reliability in automotive electronics and other industrial sectors.

Typical applications include signal amplification, switching circuits, and general-purpose discrete transistor functions in industrial electronics, automotive systems, and consumer electronics. The small size combined with high reliability makes it a preferred choice for circuit designers focused on high performance in minimal footprints.

This transistor offers a minimum DC current gain (hFE) of 125. Maximum power dissipation is rated at 300 mW for reliable operation. It operates within a temperature range from -55°C to 150°C. Pin count is 3, facilitating easy surface mount device integration.

Package dimensions are compact with length 3 mm, width 2.5 mm, and height 1.1 mm. Designed for single transistor configuration with PNP polarity. Supports automotive standards AEC-Q100, AEC-Q101, and AEC-Q200. Suitable for various industrial electronics applications requiring small signal amplification.

Explore more Bipolar Transistors and discrete semiconductor components at EnvMart to find ideal parts for your industrial, automotive, and electronic circuit design needs.

DiodesZetex Small Signal PNP Transistor BC857A-7-F, -100 mA, -45 V, 3-Pin SOT-23 Package
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this model is -45 V.

The minimum DC current gain (hFE) of the BC857A-7-F is 125.

The package dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The maximum power dissipation for the BC857A-7-F is rated at 300 mW.

This transistor operates within a temperature range from -55°C to 150°C.

It is designed for a single transistor configuration with PNP polarity.

The BC857A-7-F supports automotive standards AEC-Q100, AEC-Q101, and AEC-Q200.

The maximum DC collector current (Idc) for the BC857A-7-F is -100 mA.

The maximum transition frequency (ft) for this model is 200 MHz.

This model supports surface mounting.

The maximum emitter-base voltage (VEBO) for the BC857A-7-F is -5 V.

The maximum collector-base voltage (VCBO) for this transistor is -50 V.

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