onsemi Isolated 2 N-Channel Power MOSFET, 510 mA, 50 V Enhancement, 6-Pin SOT-23 NDC7002N

onsemi NDC7002N is an isolated enhancement mode dual N-Channel power MOSFET designed for low power applications requiring compact and reliable switching performance.

With a maximum continuous drain current of 510 mA and a maximum drain-source voltage of 50 V, this device is ideal for industrial, laboratory, and electronic component manufacturing use cases.

The MOSFET features a low maximum drain-source resistance of 4 ohms, promoting efficient power management and minimal heat generation under operation. Its small SOT-23 6-pin package (3 mm length × 1.7 mm width × 1 mm height) allows for easy surface mount on PCBs in compact electronic assemblies.

The typical gate charge of 1 nC at gate-source voltage ensures fast switching capabilities, improving overall system response times in control circuits and power regulation modules.

Operation is sustained within a temperature range from -55°C to +150°C, making it suitable for harsh environmental conditions. This MOSFET contains two elements per chip which increases versatility for dual-channel applications.

This enhancement mode MOSFET provides reliable switching with isolated transistor configuration. Compact SOT-23 package facilitates efficient PCB layout and miniaturization of designs. Wide operating temperature range enables dependable performance across various industrial environments.

Low on-resistance maximizes power efficiency and reduces thermal losses. Typical gate charge and voltage ratings are optimized for control circuit integration.

The NDC7002N from onsemi is well suited for electronic components assembly, semiconductor applications, discrete semiconductors in power electronics, and other technical fields requiring precise MOSFET devices.

Explore EnvMart for a broad selection of electronic components and Power MOSFETs including the NDC7002N by onsemi.