DiodesZetex Small Signal NPN Transistor 100 mA 45 V 3-Pin SOT-23 BC847C-7-F

DiodesZetex BC847C-7-F is a small signal NPN bipolar junction transistor designed for medium voltage and low current switching and amplification applications. Featuring a maximum DC collector current of 100 mA and maximum collector-emitter voltage of 45 V, this transistor is housed in a compact 3-pin SOT-23 surface-mount package, ideal for modern automated assembly processes.

The transistor provides a high transition frequency up to 300 MHz, making it suitable for high-speed electronic circuits such as signal amplification, switching in industrial, communication, and automotive applications. It complies with the AEC-Q101 automotive qualification standard, underscoring its suitability for demanding automotive environments.

The BC847C-7-F operates reliably over a broad temperature range from -65°C to 150°C, ensuring stable performance in extreme environmental conditions. Its minimum DC current gain of 420 supports efficient amplification, while the low maximum power dissipation rating of 300 mW allows integration into compact circuit designs without excessive heat generation.

Key features include its single transistor configuration, NPN polarity, and surface mount design with a small form factor of 3 mm length, 2.5 mm width, and 1.1 mm height to optimize PCB space. It is widely used in industrial automation, telecommunications, laboratory instruments, and other electronic applications requiring precise and reliable transistor switching.

Maximum collector current rating of 100 mA for reliable switching applications. Maximum collector-emitter voltage of 45 V ensures safe operation in medium voltage circuits. Compact 3-pin SOT-23 surface-mount package suitable for automated PCB assembly.

High transition frequency of 300 MHz allows for high-speed switching and amplification. Compliance with AEC-Q101 automotive standard ensures high reliability in automotive environments. Wide operating temperature range from -65°C to 150°C for harsh industrial and automotive use.

Minimum DC current gain (hFE) of 420 provides efficient transistor amplification. Low maximum power dissipation of 300 mW suitable for compact electronic designs.

This transistor is an essential component for designers seeking performance and reliability in compact electronic modules for industrial, automotive, telecommunications, and laboratory uses. Explore more bipolar transistor products in the Electronics & Electricals section on EnvMart.

Explore more products in our Bipolar Transistors category.