Infineon Broadband RF Bipolar Transistor NPN 55 mA 2.25 V 4-Pin SOT-343 BFP843H6327XTSA1

Infineon BFP843H6327XTSA1 broadband RF bipolar transistor is a high-performance NPN transistor featuring low noise and a pre-matched design for superior RF applications. It is housed in a SOT-343 surface mount package with 4 pins, optimizing the layout for space-constrained circuit designs.

With a maximum DC collector current of 55 mA and maximum collector emitter voltage of 2.25 V, this transistor is suitable for low voltage electronic components in wireless communication devices, satellite communication systems, and advanced navigation equipment.

This device provides a minimum DC current gain (hFE) of 150, ensuring efficient amplification of high-frequency signals. Its maximum power dissipation of 125 mW supports robust operation without significant thermal stress.

Engineered to operate reliably across a broad temperature range from -55°C up to +150°C, the transistor is designed for industrial and commercial use in demanding environments. The BFP843H6327XTSA1 series complies with JEDEC47/20/22 standards, guaranteeing quality and consistency for semiconductor components deployed in critical applications.

Maximum DC collector current of 55 mA. Maximum collector emitter voltage of 2.25 V. 4-Pin SOT-343 surface mount package. Power dissipation up to 125 mW. High DC current gain (minimum hFE of 150). Operating temperature range from -55°C to 150°C.

Industry-standard compliance with JEDEC47/20/22. Ideal for wireless, satellite, and navigation communication systems.

This transistor is widely used in industrial, telecommunications, and electronic manufacturing sectors. It is suited for engineers and designers looking for reliable broadband RF Bipolar Transistors with excellent noise performance and robust specifications.

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