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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.51mm |
| Length | 10.67mm |
| Model | AUIRF3205Z |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
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| RS Stock No. | 737-7436Brand: InfineonManufacturers Part No.: AUIRF3205Z |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 6.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon AUIRF3205Z is a HEXFET N-Channel Power MOSFET designed to deliver superior performance in automotive and industrial environments, meeting AEC-Q101 automotive qualification standards. This MOSFET features an enhancement mode channel with a maximum continuous drain current of 110 A and a drain-source voltage rating of 55 V, offering high power efficiency and robust handling capabilities.
The device is packaged in a TO-220AB through-hole mount package, facilitating easy integration onto PCBs while ensuring reliable heat dissipation with a maximum power dissipation rating of 170 W. Operating temperature limits from -55°C to 175°C guarantee durability under harsh conditions experienced in automotive and industrial applications.
With a low maximum drain-source resistance of 6.5 milliohms, the MOSFET minimizes conduction losses and supports high efficiency in power switching circuits. The typical gate charge of 76 nC and gate-source voltage capability of -20 V to +20 V improve switching responsiveness and versatility in circuit design.
This 3-pin device with a forward voltage of 1.3 V is ideal for use in power management, motor control, and other automotive and industrial power electronics applications requiring stringent performance and reliability standards.
Maximum continuous drain current: 110 A. Maximum drain-source voltage: 55 V. Package type: TO-220AB, through-hole mount. Pin count: 3. Maximum power dissipation: 170 W. Operating temperature range: -55°C to 175°C. Maximum drain-source resistance: 6.5 mΩ.
Typical gate charge: 76 nC. Gate-source voltage range: -20 V to +20 V. Forward voltage: 1.3 V.
This MOSFET is suitable for automotive, industrial, HVAC, and power conversion systems demanding high efficiency and reliability. The Infineon AUIRF3205Z combines robust electrical characteristics with automotive-grade qualification, supporting advanced power electronics designs.
Explore more Power MOSFETs and related semiconductor devices on EnvMart to find components tailored to your design requirements.
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