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Infineon HEXFET N-Channel MOSFET 30 V 3.4 A 3-Pin SOT-23 Surface Mount IRLML6346TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML6346TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 737-7234Brand: InfineonManufacturers Part No.: IRLML6346TRPBFDistrelec Article No.: 304-45-319 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 2.9nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low RDS(on) of 80 mΩ reduces conduction losses.
- Maximum continuous drain current of 3.4 A for moderate loads.
- Enhancement mode N-channel with 30 V drain-source voltage rating.
- Compact 3-pin SOT-23 surface-mount package saves PCB space.
- Typical gate charge of 2.9 nC enables fast switching transitions.
- Gate voltage tolerance from -12 V to +12 V supports standard drive voltages.
- Maximum power dissipation of 1.3 W supports sustained operation.
- Wide operating temperature range from -55°C to 150°C.
Product Description
Infineon IRLML6346TRPBF HEXFET N-Channel MOSFET is a surface-mount device designed for power switching and management in compact electronic assemblies. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 3.4 A, making it suitable for low-voltage DC switching applications requiring efficient conduction and moderate power dissipation.
The transistor uses an enhancement channel with a low on-resistance of 80 mΩ to minimize conduction losses. Its typical gate charge of 2.9 nC facilitates fast switching, and the device supports gate voltages from -12 V to +12 V, compatible with standard gate driver voltages.
The compact SOT-23 package and surface-mount design reduce board space and simplify assembly with standard pick-and-place processes. This MOSFET is rated for a maximum power dissipation of 1.3 W and supports a wide operating temperature range from -55°C to 150°C, requiring adequate thermal management in PCB design to ensure junction temperature limits are maintained.
Applications include DC-DC converter switching stages, battery management systems, motor-driver gate stages, and general-purpose power management on surface-mount boards. The design considerations include thermal planning and layout optimization to exploit the device's conduction performance, and gate driver sizing to balance switching losses and electromagnetic interference during fast transitions.
Low conduction resistance of 80 mΩ minimizes power loss. Continuous current rating of 3.4 A for moderate load handling. Supports 30 V drain-source voltage for low voltage rails. Small SOT-23 package for compact PCB design.
Fast gate switching with typical 2.9 nC gate charge. Compatible with ±12 V gate drive voltages. Maximum power dissipation of 1.3 W supports continuous operation. Wide temperature range from -55°C to 150°C for industrial use.
Suitable for battery management and DC-DC conversion. Explore our comprehensive range of discrete MOSFETs and electronic components to support your industrial and electronic manufacturing needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.4 A, suitable for moderate load applications.
This MOSFET has a maximum drain-source voltage rating of 30 V, making it suitable for low-voltage applications.
The typical gate charge for this MOSFET is 2.9 nC, which facilitates fast switching transitions.
It features a low on-resistance of 80 mΩ, which helps to minimize conduction losses during operation.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The maximum power dissipation for this model is 1.3 W, supporting sustained operation under appropriate conditions.
This MOSFET operates within a wide temperature range from -55°C to 150°C, suitable for industrial applications.
It uses an enhancement mode N-channel, which is designed for efficient power switching.
The gate voltage tolerance for this MOSFET ranges from -12 V to +12 V, compatible with standard drive voltages.
This MOSFET is suitable for applications such as DC-DC converter switching stages, battery management systems, and motor-driver gate stages.
The SOT-23 package of this model has 3 pins, allowing for compact integration in electronic assemblies.
The country of origin for this MOSFET is India.
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