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Infineon HEXFET N-Channel MOSFET 6.3A 20V Enhancement Mode Surface-Mount 3-Pin SOT-23 IRLML6244TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML6244TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 737-7228Brand: InfineonManufacturers Part No.: IRLML6244TRPBFDistrelec Article No.: 304-45-316 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 27mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 8.9nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
Key Features
- Very low on-resistance of 27 milliohms reduces conduction losses.
- Package type SOT-23 supports compact surface-mount PCB designs.
- Enhancement mode ensures efficient, robust switching behavior.
- Maximum power dissipation of 1.3 watts suitable for sustained load conditions.
- Wide operating temperature range from -55°C to 150°C enables use in harsh environments.
- Gate charge of 8.9 nanocoulombs supports high switching efficiency.
- Gate-source voltage tolerance up to ±12 volts allows robust drive margin.
- Compact 3.04 mm length by 1.4 mm width by 1.02 mm height minimizes PCB footprint.
Product Description
Infineon IRLML6244TRPBF HEXFET N-Channel MOSFET is a low-voltage switching transistor designed for surface-mount applications requiring compact power handling capabilities. It supports a continuous drain current of 6.3 amperes and a maximum drain-to-source voltage of 20 volts, making it suitable for efficient power management and switching applications.
This device features a very low drain-source resistance of 27 milliohms which minimizes conduction losses and improves efficiency in power circuits. Packaged in a compact SOT-23 surface-mount case, it supports automated PCB assembly and reduces board space requirements.
Operable over a wide temperature range from -55°C up to 150°C, it is reliable for use in harsh thermal environments. The enhancement mode channel enables fast and efficient switching suitable for DC-DC converters, battery management circuits, portable power supplies, and telecommunications equipment.
The device’s gate charge is low at 8.9 nanocoulombs, which helps enhance switching performance. The gate-source voltage tolerance of ±12 volts provides a robust drive margin for different control scenarios. The SOT-23 3-pin configuration facilitates simple PCB routing and mounting.
Typical applications include DC-DC converter stages in compact electronics, load switching in small motor drivers, switching regulators in telecom devices, and power path control in consumer electronics. This MOSFET supports high-efficiency operation in densely populated electronic assemblies.
Very low on-resistance reduces conduction losses. Continuous drain current supports higher load currents. Compact SOT-23 package minimizes footprint and eases automated assembly. Wide operating temperature range ensures reliability.
Low gate charge enables high switching efficiency. Robust gate-source voltage tolerance for reliable drive margins. Three-pin configuration compatible with standard PCB layouts. Ideal for power management and switching applications in consumer and industrial electronics.
Explore more Infineon MOSFETs and power management components on EnvMart for your industrial and electronics development needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.3 amperes.
This MOSFET has a maximum drain-to-source voltage of 20 volts.
It is packaged in a compact SOT-23 surface-mount case.
The height is 1.02 mm and the width is 1.4 mm.
It operates within a temperature range of -55°C to 150°C.
The gate charge is 8.9 nanocoulombs.
The maximum power dissipation is 1.3 watts.
It features an enhancement mode N-channel.
The maximum drain-source resistance is 27 milliohms.
It has a gate-source voltage tolerance of ±12 volts.
This MOSFET is suitable for applications such as DC-DC converters, battery management circuits, and load switching in small motor drivers.
It has a 3-pin configuration.
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