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Infineon HEXFET N-Channel MOSFET 5 A 30 V Enhancement Mode 3-Pin SOT-23 IRLML6344TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | IRLML6344TRPBF |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 737-7225Brand: InfineonManufacturers Part No.: IRLML6344TRPBFDistrelec Article No.: 304-45-318 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 37mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.3W |
| Typical Gate Charge Qg @ Vgs | 6.8nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | 1.2V |
Key Features
- Continuous drain current of 5 A ensures robust conduction capability.
- Maximum drain-source voltage of 30 V supports various electronic applications.
- Low on-resistance of 37 mΩ reduces power dissipation and improves efficiency.
- Enhancement mode channel type for precise load switching.
- Compact SOT-23 surface mount package measures 3.04 x 1.4 x 1.02 mm for space saving.
- Wide operating temperature range from -55°C to 150°C for reliable performance.
- Maximum gate-source voltage of −12 V to +12 V allows flexible gate drive.
- Typical gate charge of 6.8 nC enables fast switching.
Product Description
Infineon IRLML6344TRPBF HEXFET N-Channel MOSFET is a high-performance surface mount semiconductor designed for efficient switching and power management in electronic and automation sectors. Rated for a maximum continuous drain current of 5 A and maximum drain-source voltage of 30 V, this device operates in enhancement mode, offering robust conduction with low on-state resistance of 37 mΩ at VGS = 4.5 V.
The device features a compact SOT-23 3-pin package with dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height, making it ideal for compact circuit assemblies. It supports a wide operating temperature range from −55°C to +150°C, allowing reliable operation in harsh environments.
Its maximum gate-source voltage tolerance of −12 V to +12 V permits flexible control voltages while ensuring device integrity. The typical gate charge of 6.8 nC enables fast switching speeds, enhancing efficiency in power conversion.
This MOSFET is well-suited for industrial and commercial use cases including microcontroller load switching, automotive power management, DC-DC converters for efficient energy transfer, battery management systems for enhanced performance, and motor control circuits in automation.
Its low RDS(on) minimizes conduction losses and heat generation, improving overall system efficiency and reliability. The compact package design aids in achieving high-density PCB layouts while maintaining excellent thermal performance.
Continuous drain current of 5 A ensures robust conduction capability. Maximum drain-source voltage of 30 V suitable for numerous applications. Low 37 mΩ on-resistance reduces power loss and enhances efficiency. Enhancement mode channel ensures effective switching control.
Compact surface mount SOT-23 3-pin package for space-saving PCB integration. Wide temperature tolerance from -55°C to +150°C ensures operational reliability. Gate-source voltage limits of −12 V to +12 V allow versatile gate drive.
Typical gate charge of 6.8 nC supports fast and efficient switching. Power dissipation of 1.3 W maintains performance under load. Ideal for microcontroller loads, power management, battery and motor control systems.
Choose Infineon IRLML6344TRPBF for high-efficiency, reliable MOSFET performance in industrial, electronic manufacturing, automotive, and HVAC applications. Explore more Infineon semiconductor components and leverage their quality at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5 A, ensuring robust conduction capability for various applications.
This MOSFET supports a maximum drain-source voltage of 30 V, making it suitable for a range of electronic applications.
The on-resistance of this model is 37 mΩ, which helps to reduce power dissipation and improve efficiency.
The SOT-23 package measures 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, allowing for space-saving PCB integration.
The typical gate charge for this MOSFET is 6.8 nC, enabling fast switching speeds and enhancing overall efficiency.
This model operates within a wide temperature range from -55°C to 150°C, ensuring reliable performance in various environments.
The maximum gate-source voltage for this MOSFET is -12 V to +12 V, allowing for flexible gate drive configurations.
It features an enhancement mode N-channel, which provides effective load switching capabilities.
The maximum power dissipation for this MOSFET is 1.3 W, which helps maintain performance under load conditions.
This MOSFET is well-suited for applications such as microcontroller load switching, automotive power management, and DC-DC converters.
This model has a pin count of 3, which is typical for its SOT-23 package design.
The country of origin for this MOSFET is India, reflecting its manufacturing location.
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