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Infineon HEXFET N-Channel MOSFET 60 V 1.2 A Enhancement Mode 3-Pin SOT-23 IRLML2060TRPBF

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Infineon HEXFET N-Channel MOSFET 60 V 1.2 A Enhancement Mode 3-Pin SOT-23 IRLML2060TRPBF

Name: Infineon HEXFET N-Channel MOSFET 60 V 1.2 A Enhancement Mode 3-Pin SOT-23 IRLML2060TRPBF
Brand: Infineon
SKU: 360059
Price: 0.14 USD
Availability: InStock

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Category MOSFETs Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.02mm
Length	3.04mm
Model	IRLML2060TRPBF
Width	1.4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
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RS Stock No.	725-9357Brand: InfineonManufacturers Part No.: IRLML2060TRPBFDistrelec Article No.: 304-45-313
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	1.2A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	480mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.25W
Typical Gate Charge Qg @ Vgs	0.67nC
Maximum Gate Source Voltage Vgs	-16, +16V
Forward Voltage Vf	1.2V

Key Features

Low on-resistance of 480 mΩ reduces conduction losses and improves efficiency.
Enhancement-mode N-channel MOSFET for efficient low-power switching.
Compact 3-pin SOT-23 surface-mount package minimizes PCB footprint.
Maximum continuous drain current of 1.2 A supports modest load currents.
Operating temperature range from -55°C to 150°C for reliable performance.
Typical gate charge of 0.67 nC enables fast switching.
Maximum gate-source voltage of ±16 V protects against overvoltage.
Maximum power dissipation of 1.25 W limits thermal rise under load.

Product Description

Infineon IRLML2060TRPBF is a HEXFET N-Channel enhancement-mode MOSFET designed for low-power switching applications. With a maximum continuous drain current of 1.2 A and a maximum drain-source voltage of 60 V, this device fits well in portable and space-constrained electronic assemblies using standard surface-mount technology.

The 3-pin SOT-23 package allows for reduced board space and facilitates automated placement for high-density circuit designs. Its low drain-source resistance of 480 mΩ minimizes conduction losses, enhancing efficiency in power management.

Designed to tolerate temperatures from -55°C to 150°C, the IRLML2060TRPBF is well suited for industrial, instrumentation, and commercial electronics applications where thermal variation occurs. The typical gate charge of 0.67 nC supports faster gate driving speeds, improving switching performance.

With a maximum power dissipation of 1.25 W, thermal management during duty cycles and switching frequencies needs consideration to prevent excessive junction heating. The maximum gate-source voltage withstand of ±16 V protects against overdrive voltage stresses.

Low on-resistance of 480 mΩ reduces conduction losses and improves efficiency. Compact 3-pin SOT-23 package for minimal PCB space usage and surface-mount assembly. Operating temperature range of -55°C to 150°C for stable operation in varying environments.

Typical gate charge of 0.67 nC enables high-speed switching applications. Maximum power dissipation rating of 1.25 W supports moderate current loads. Suitable for DC switch control in battery-powered devices and small motor driver circuits.

Ideal for signal-level power distribution and compact power management modules. Industrial, laboratory, commercial, and instrumentation use cases.

This Infineon HEXFET MOSFET supports modern electronics designs requiring reliable switching with compact form factor and moderate power handling. Explore the Electronics & Electricals category at EnvMart for related discrete semiconductors and MOSFET components.

Explore more products in our MOSFETs category.