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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800 V, 250 mA, 4-Pin SOT-223 STN1NK80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 1.8mm |
| Length | 6.5mm |
| Model | STN1NK80Z |
| Width | 3.5mm |
| Mount Type | Surface |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 714-1076Brand: STMicroelectronicsManufacturers Part No.: STN1NK80ZDistrelec Article No.: 304-43-898 |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 250mA |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 16Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 7.7nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET features an enhancement mode channel with a maximum drain-source resistance of 16 ohms.
- Typical gate charge is 7.7 nC at Vgs.
- Maximum power dissipation is 2.5 W, suitable for low power applications.
- Device operates over a temperature range from -55°C to 150°C.
- Compact dimensions include length of 6.5 mm, width of 3.5 mm, and height of 1.8 mm.
- Maximum gate-source voltage ranges between -30 and +30 V.
- Forward voltage is typically 1.6 V.
- Designed for surface mounting on printed circuit boards.
Product Description
STMicroelectronics STN1NK80Z is a MDmesh SuperMESH N-Channel MOSFET designed for power electronic applications requiring a high voltage capability of up to 800 V and a low continuous drain current of 250 mA. Packaged in a compact 4-pin SOT-223 surface mount form factor, this device offers efficient switching performance as part of the MDmesh SuperMESH series.
The device operates in enhancement mode and features a maximum drain-source resistance of 16 ohms, helping to reduce conduction losses. Its typical gate charge of 7.7 nC allows for faster switching, making it suitable for industrial, commercial, and consumer electronic circuits where efficient low power switching is required.
Thermal management is supported by a maximum power dissipation rating of 2.5 W and an operating temperature range from -55°C to 150°C, ensuring reliability across harsh environments encountered in industrial automation, power supplies, and electronic control systems.
Physical dimensions of the STN1NK80Z include a length of 6.5 mm, width of 3.5 mm, and height of 1.8 mm, ideal for space-constrained PCB layouts. The device supports maximum gate-source voltage swings from -30 to +30 V and features a forward voltage drop of 1.6 V typically, contributing to effective drive control in switching circuits.
This N-Channel MDmesh SuperMESH MOSFET delivers reliable switching at high voltage and low current levels. Its surface mount SOT-223 package is compatible with modern PCB assembly technologies. The device is compliant with RoHS standards and designed for contemporary power electronics applications.
Thermal and electrical characteristics make it suitable for industrial, laboratory, consumer electronics, and power management systems. Typical applications include power conversion, switching regulators, load switches, and electronic voltage control.
Explore the discrete semiconductor MOSFET category on EnvMart for a wide selection of power and signal MOSFETs from leading brands including STMicroelectronics.
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Frequently Asked Questions
The maximum continuous drain current for this MOSFET is 250 mA.
The maximum drain-source voltage rating is 800 V.
This MOSFET has dimensions of 6.5 mm in length, 3.5 mm in width, and 1.8 mm in height.
The maximum power dissipation for the STN1NK80Z is 2.5 W.
The typical gate charge is 7.7 nC at Vgs.
The operating temperature range is from -55°C to 150°C.
This model comes in a 4-pin SOT-223 surface mount package.
The maximum gate-source voltage ranges between -30 V and +30 V.
The forward voltage drop is typically 1.6 V.
This MOSFET utilizes an N-channel type.
The maximum drain-source resistance is 16 ohms.
This MOSFET is suitable for applications such as power conversion, switching regulators, load switches, and electronic voltage control.
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