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DiodesZetex NPN Transistor MMBTA06-7-F 500 mA 80 V 3-Pin SOT-23 Surface Mount MMBTA06-7-F

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model MMBTA06-7-F
Width 2.5mm
Mount Type Surface
Series MMBTA06
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
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RS Stock No. 711-4894Brand: DiodesZetexManufacturers Part No.: MMBTA06-7-F
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 4V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single

Key Features

  • This transistor uses a Single NPN transistor configuration suitable for general purpose applications.
  • It features a maximum DC collector current of 500 mA and collector-emitter voltage of 80 V.
  • Maximum power dissipation rating of 300 mW supports robust operation.
  • Operates over a wide temperature range from -55°C to 150°C for reliable performance.
  • Complies with the AEC-Q101 automotive standard for vehicle electronics.
  • Compact 3-pin SOT-23 surface mount package facilitates PCB assembly.

Product Description

DiodesZetex MMBTA06-7-F NPN Transistor is designed for general purpose industrial and electronic circuit applications requiring a reliable small-signal transistor. It is configured as a single NPN transistor suitable for switching and amplification with a collector current up to 500 mA and collector-emitter voltage rating of 80 V. The device is housed in a compact 3-pin SOT-23 surface mount package facilitating efficient PCB layout and automated assembly.

Operating over a temperature range from -55°C to 150°C, this transistor is robust for harsh environments and supports automotive electronics through compliance with the AEC-Q101 standard. Maximum power dissipation is rated at 300 mW, balancing power capability with compact size.

Key mechanical dimensions of approximately 3 mm length, 2.5 mm width, and 1.1 mm height allow use in space-constrained designs. The transistor’s minimum DC current gain (hFE) of 100 ensures suitable amplification gain for standard circuit needs.

This device is specifically suited for industrial automation, power management, signal processing, and other electronics requiring reliable bipolar transistor components. Its surface mount design and standard footprint make it compatible with modern manufacturing processes.

This transistor uses a Single NPN transistor configuration suitable for general purpose applications. Features a maximum DC collector current of 500 mA and collector-emitter voltage of 80 V. Maximum power dissipation of 300 mW for sustained operation.

Wide operating temperature range from -55°C to 150°C ensures versatility. AEQ-Q101 automotive standard compliant for high reliability in vehicle electronics. Compact SOT-23 package for surface mount applications. Explore the extensive range of DiodesZetex Bipolar Transistors and semiconductor devices at EnvMart for your electronic design and manufacturing needs.

DiodesZetex NPN Transistor MMBTA06-7-F 500 mA 80 V 3-Pin SOT-23 Surface Mount MMBTA06-7-F
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Frequently Asked Questions

The maximum DC collector current for this transistor is 500 mA.

The collector-emitter voltage rating of the MMBTA06-7-F is 80 V.

This model has a maximum power dissipation rating of 300 mW.

The MMBTA06-7-F operates over a wide temperature range from -55°C to 150°C.

It uses a single NPN transistor configuration suitable for general purpose applications.

The dimensions of this transistor are approximately 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

Yes, it complies with the AEC-Q101 automotive standard for vehicle electronics.

The minimum DC current gain (hFE) for this model is 100.

It is housed in a compact 3-pin SOT-23 surface mount package.

The maximum emitter-base voltage (VEBO) for the MMBTA06-7-F is 4 V.

This transistor is suitable for general purpose industrial and electronic circuit applications, including switching and amplification.

The country of origin for this transistor is India.

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