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Vishay Silicon Junction Switching Diode, Single, 600 mA, 50 V SMB Package LL4150GS08

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 1.6mm
Brand Vishay
Height 1.6mm
Length 1.6mm
Model LL4150GS08
Width 1.6mm
Mount Type Surface
Series LL4150
Maximum Operating Temperature 175°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
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RS Stock No. 710-4512PBrand: VishayManufacturers Part No.: LL4150GS08
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 600mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Single diode configuration providing high reliability.
  • Maximum forward current of 600 mA ensures robust performance.
  • Fast switching capable with peak reverse recovery time of 4 ns.
  • Rated for maximum peak reverse voltage of 50 V.
  • Operating temperature range from -65°C to 175°C for versatile applications.
  • Low leakage current with typical IR less than 0.2 μA for efficiency.
  • Peak non-repetitive forward surge current capability of 4 A.
  • Compact SMB package with 1.6 mm x 1.6 mm x 1.6 mm dimensions.

Product Description

Vishay LL4150GS08 is a Silicon Junction Switching Diode designed for high efficiency and reliability in electronic circuits. It supports a maximum forward current of 600 mA and operates within a wide temperature range of -65°C to 175°C, making it suited for demanding industrial and commercial applications.

This diode features a superectifier structure with a cavity-free glass-passivated junction, ensuring low leakage current under typical operating conditions. It is offered in a compact SMB surface-mount package with 2 pins, sized 1.6 mm in height, length, width, and diameter, suitable for space-constrained PCB layouts.

Its fast switching capability is highlighted by a peak reverse recovery time of 4 nanoseconds, enabling efficient use in high-speed switching circuits. The diode handles a maximum peak reverse repetitive voltage of 50 V and sustains a peak non-repetitive forward surge current of 4 A, allowing for transient surge resilience and enhanced reliability.

The diode’s terminals are matte tin plated, providing excellent solderability compliant with J-STD-002 and JESD 22-B102 standards. The molding compound adheres to UL 94 V-0 flammability rating for safety compliance.

Typical applications include high voltage rectification such as G2 grid circuits in cathode ray tubes (CRT) and televisions, as well as snubber circuits for camera flashes where fast switching and reliability are critical.

Single diode configuration providing high reliability. Maximum forward current of 600 mA ensures robust performance. Fast switching capable with peak reverse recovery time of 4 ns. Rated for maximum peak reverse voltage of 50 V.

Operating temperature range from -65°C to 175°C for versatile applications. Low leakage current with typical IR less than 0.2 μA for efficiency. Peak non-repetitive forward surge current capability of 4 A. Compact SMB package with 1.6 mm x 1.6 mm x 1.6 mm dimensions.

Matte tin plated leads for reliable solderability. Cavity-free glass passivated junction for enhanced durability. Ideal for use in industrial electronic assemblies, laboratory instrumentation, consumer electronics manufacturing, and HVAC control circuits.

Explore more electronic components and semiconductors in the Vishay series and find compatible devices at EnvMart.

Explore more products in our Discrete Semiconductor category.

Vishay Silicon Junction Switching Diode, Single, 600 mA, 50 V SMB Package LL4150GS08
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Frequently Asked Questions

The maximum forward current of this diode is 600 mA, ensuring robust performance in various applications.

This model features a peak reverse recovery time of 4 nanoseconds, enabling fast switching capabilities.

The diode is rated for a maximum peak reverse repetitive voltage of 50 V, making it suitable for high voltage applications.

The SMB package dimensions are 1.6 mm x 1.6 mm x 1.6 mm, making it compact for space-constrained PCB layouts.

It operates within a temperature range of -65°C to 175°C, allowing for versatile applications in various environments.

The diode can sustain a peak non-repetitive forward surge current of 4 A, providing resilience against transient surges.

The typical leakage current is less than 0.2 μA, which contributes to its efficiency in electronic circuits.

This diode supports surface mounting, making it suitable for various electronic assembly applications.

The maximum power dissipation for this diode is 500 mW, which is important for thermal management in circuits.

The diode is configured as a single diode, providing high reliability for various electronic applications.

The matte tin plated leads comply with J-STD-002 and JESD 22-B102 standards for reliable solderability.

Typical applications include high voltage rectification in cathode ray tubes and snubber circuits for camera flashes, where fast switching is critical.

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