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Vishay Silicon Junction Switching Diode Single 600 mA 2-Pin SMB 50 V LL4150GS08

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 1.6mm
Brand Vishay
Height 1.6mm
Length 1.6mm
Model LL4150GS08
Width 1.6mm
Mount Type Surface
Series LL4150
Maximum Operating Temperature 175°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
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RS Stock No. 710-4512Brand: VishayManufacturers Part No.: LL4150GS08Distrelec Article No.: 304-36-073
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 600mA
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • Features a superectifier structure for high reliability under electrical stress.
  • Glass-passivated junction ensures cavity-free construction for improved performance.
  • Designed for fast switching applications with a peak reverse recovery time of 4 ns.
  • Offers low leakage current with typical IR less than 0.2 μA.
  • High forward surge capability with peak non-repetitive forward surge current of 4 A.
  • Molded epoxy DO-204AL package with matte tin-plated leads that are solderable per industry standards.
  • Operating temperature range from -65°C to 175°C for robust industrial use.
  • Compact dimensions of approximately 1.6 mm (height, length, width, and diameter) suitable for compact circuits.

Product Description

Vishay LL4150GS08 is a silicon junction switching diode designed for high efficiency fast switching and high reliability in a compact and surface mount SMB package. It supports a maximum forward current of 600 mA and peak repetitive reverse voltage of 50 V, making it suitable for demanding industrial and electronic applications.

This diode features a superectifier structure for excellent electrical stress tolerance and a cavity-free glass-passivated junction to ensure stable performance and low leakage currents typically below 0.2 μA. The peak reverse recovery time is only 4 ns, enabling efficient fast switching in power regulation and snubber circuits.

Packaged in a DO-204AL molded epoxy case with matte tin-plated solderable leads complying with J-STD-002 and JESD 22-B102 standards, the diode is mechanically robust and flame retardant per UL 94 V-0 ratings. The color band indicates the cathode end for correct polarity installation.

Its electrical specifications include a maximum power dissipation of 500 mW, a forward voltage of 1 V maximum, and a non-repetitive forward surge current rating of 4 A. The operational temperature range from -65°C to 175°C ensures reliability across harsh environmental conditions.

Typical applications include high voltage rectification for G2 grids in cathode ray tubes and televisions, as well as use as a snubber diode in camera flash circuits. This commercially graded, RoHS-compliant component is identified by series LL4150 and part number LL4150GS08.

Features a superectifier structure for high reliability under electrical stress. Glass-passivated junction ensures cavity-free construction for improved performance. Designed for fast switching applications with a peak reverse recovery time of 4 ns.

Offers low leakage current with typical IR less than 0.2 μA. High forward surge capability with peak non-repetitive forward surge current of 4 A. Molded epoxy DO-204AL package with matte tin-plated leads that are solderable per industry standards.

Operating temperature range from -65°C to 175°C for robust industrial use. Compact dimensions of approximately 1.6 mm (height, length, width, and diameter) suitable for compact circuits. Ideal for high voltage rectification in CRT and TV G2 grids and camera flash snubber circuits.

This diode is essential for industrial electronics, power management, consumer electronics manufacturing, and laboratory equipment requiring reliable switching and rectification components. Explore additional Vishay semiconductor products at EnvMart for comprehensive electronic component sourcing.

Explore more products in our Discrete Semiconductor category.

Vishay Silicon Junction Switching Diode Single 600 mA 2-Pin SMB 50 V LL4150GS08
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Frequently Asked Questions

The maximum forward current rating of this diode is 600 mA.

The peak reverse recovery time for this model is 4 ns, enabling efficient fast switching applications.

It can handle a maximum peak reverse repetitive voltage of 50 V.

The operating temperature range for this diode is from -65°C to 175°C.

This diode is packaged in a DO-204AL molded epoxy case with a surface mount SMB package type.

The maximum power dissipation for this model is 500 mW.

The maximum forward voltage rating is 1 V.

The peak non-repetitive forward surge current rating is 4 A.

The glass-passivated junction ensures cavity-free construction, which improves performance and reduces leakage currents.

The typical leakage current is less than 0.2 μA.

This diode is suitable for high voltage rectification in CRT and TV G2 grids, as well as for use as a snubber diode in camera flash circuits.

The diode has a pin count of 2.

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