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Vishay Switching Diode, Single, 1 A, 2-Pin, 50 V SMA Surface Mount RS1A-E3/61T
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.09mm |
| Length | 4.5mm |
| Model | RS1A-E3/61T |
| Width | 2.79mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 710-3096PBrand: VishayManufacturers Part No.: RS1A-E3/61T |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 150ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 50V |
Key Features
- This diode features a low maximum forward voltage of 1.3 V for efficient power handling.
- It offers a fast peak reverse recovery time of 150 ns, suitable for switching applications.
- The device operates reliably from -55°C up to 150°C, ensuring durability in harsh environments.
- Small dimensions of 4.5 mm length, 2.79 mm width, and 2.09 mm height enable compact PCB layouts.
- Supports a peak non-repetitive forward surge current of 30 A, providing transient robustness.
- Constructed with silicon junction technology for stable electrical characteristics.
- The SMA package facilitates surface mounting for automated assembly processes.
- Non-automotive grade with standard industrial certifications applicable.
Product Description
The Vishay RS1A-E3/61T switching diode is a single configuration silicon junction diode designed specifically for power and switching applications. It provides a continuous forward current capacity of 1 A, making it ideal for use in power management circuits, rectification, and signal switching in industrial and commercial electronic equipment.
This diode is housed in a compact SMA surface mount package measuring 4.5 mm in length, 2.79 mm in width, and standing 2.09 mm high. Its small form factor supports high-density PCB layouts while ensuring efficient heat dissipation. The diode’s maximum forward voltage of 1.3 V ensures efficient conduction with minimal power loss during operation.
The device offers a fast peak reverse recovery time of 150 nanoseconds, which is essential for reducing switching losses, making it suitable for high-frequency switching power supplies and converters. The diode's operating temperature range from -55°C to 150°C ensures dependable performance in various environmental conditions, including industrial and commercial applications.
The RS1A-E3/61T supports a peak non-repetitive forward surge current of 30 A, providing robustness against transient overloads commonly encountered in power circuits. As a standard silicon junction diode, it delivers stable electrical characteristics across its operating range.
This diode features a low maximum forward voltage, reducing conduction losses. It offers fast reverse recovery for efficiency in switching circuits. Compact SMA surface mount package supports automated assembly. Wide operating temperature range from -55°C to 150°C.
High surge current rating for transient protection. Designed with silicon junction technology for reliable performance. Ideal for industrial, laboratory, and power management electronics.
The package contents include a single Vishay RS1A-E3/61T switching diode in SMA format, ready for integration into surface mount assemblies. This component is suitable for engineers and designers seeking a reliable, efficient switching diode for power and signal applications.
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Frequently Asked Questions
The maximum forward current of this diode is 1 A, making it suitable for power management circuits and signal switching applications.
The peak reverse recovery time is 150 nanoseconds, which helps reduce switching losses in high-frequency applications.
The SMA package measures 4.5 mm in length, 2.79 mm in width, and 2.09 mm in height, allowing for compact PCB layouts.
This diode can operate reliably at a maximum temperature of 150°C, suitable for various environmental conditions.
The diode supports a peak non-repetitive forward surge current of 30 A, providing robustness against transient overloads.
The maximum forward voltage is 1.3 V, which ensures efficient conduction with minimal power loss during operation.
This model supports surface mounting, facilitating automated assembly processes in electronic applications.
The minimum operating temperature is -55°C, allowing it to function in harsh environments.
This diode features a single configuration, suitable for various power and switching applications.
The RS1A-E3/61T diode is made in India.
The maximum peak reverse repetitive voltage for this diode is 50 V, making it suitable for various applications.
It is constructed using silicon junction technology, providing stable electrical characteristics across its operating range.
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