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Vishay Silicon Junction Switching Diode 300mA 75V DO-35 1N4148-TAP

Category Discrete Semiconductor Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 1.75mm
Brand Vishay
Height 1.7mm
Length 3.4mm
Model 1N4148-TAP
Width 1.7mm
Mount Type Through Hole
Series 1N4148
Maximum Operating Temperature 175°C
Package Type DO-35
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
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RS Stock No. 700-3674PBrand: VishayManufacturers Part No.: 1N4148-TAP
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V

Key Features

  • Glass passivated junction construction ensures stability and reliability.
  • Fast switching characteristics provide high efficiency in electronic circuits.
  • Maximum power dissipation is 500mW, supporting robust operation.
  • Low leakage current with typical IR less than 0.2 μA.
  • Solder dip temperature up to 275 °C for 10 seconds ensures manufacturing compatibility.
  • Package type is DO-35 with through-hole mount and 2 pins.
  • Peak reverse recovery time of 4ns enables rapid switching performance.
  • Operating temperature range from -65°C to 175°C suits varied industrial environments.

Product Description

Vishay 1N4148-TAP Silicon Junction Diode is a premium Discrete Semiconductor device designed for fast switching applications up to 75 volts and nominal forward current of 300mA. Packaged in a DO-35 glass passivated junction, this diode offers high reliability and excellent performance in diverse electronic and industrial use cases.

The diode’s robust construction includes a cavity-free glass-passivated junction and a superectifier structure that contributes to its high surge capability and low leakage current of typically under 0.2 microamperes. This makes it ideal for high voltage rectification tasks, such as in CRT and television G2 grid circuits and snubber circuits for camera flashes.

The device supports a maximum power dissipation of 500mW and has a peak reverse recovery time of only 4 nanoseconds, ensuring efficient operation within switching power supplies and signal processing modules. It tolerates operating temperatures ranging from -65°C to as high as 175°C, allowing deployment in harsh industrial, laboratory, and commercial environments.

The diode is supplied in a standard DO-35 through hole package, with matte tin plated leads conforming to J-STD-002 and JESD 22-B102 standards, promoting easy soldering and long-term reliability. The device meets UL 94 V-0 flammability ratings on the molding compound, further bolstering safety credentials.

Typical applications include high voltage rectification, industrial electronics, consumer electronics repair and manufacturing, signal switching, and protective circuits. Glass passivated junction ensures operational stability.

Fast switching time enhances circuit efficiency. Low leakage current promotes power saving in circuits. High surge capability protects against electrical transients. Compatible with standard soldering processes for PCB assembly.

Wide operating temperature suitable for industrial environments. Standard DO-35 package for easy integration in through-hole designs. Explore the diverse range of semiconductor components and electronic devices available on EnvMart for your industrial and manufacturing needs.

Vishay Silicon Junction Switching Diode 300mA 75V DO-35 1N4148-TAP
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Frequently Asked Questions

The maximum forward current for this diode is 300mA.

The peak reverse recovery time is 4 nanoseconds, enabling rapid switching performance.

The maximum power dissipation is 500mW, supporting robust operation in various applications.

The operating temperature range is from -65°C to 175°C, suitable for harsh industrial environments.

This diode is packaged in a standard DO-35 through-hole package, facilitating easy integration into circuits.

The maximum peak reverse repetitive voltage is 75V, making it suitable for high voltage applications.

The dimensions are 3.4mm in length, 1.7mm in width, and 1.7mm in height, with a diameter of 1.75mm.

The typical leakage current is less than 0.2 microamperes, promoting power efficiency in circuits.

This diode is suitable for high voltage rectification, signal switching, and protective circuits.

The diode configuration is single, designed for efficient performance in various electronic circuits.

The maximum forward voltage is 1V, which is typical for silicon junction diodes.

The glass passivated junction construction ensures stability and reliability in performance.

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