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Infineon HEXFET N-Channel MOSFET, 100 V, 97 A Continuous Drain Current, Enhancement Mode, 3-Pin TO-220 IRFB4410ZPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4410ZPBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-6954Brand: InfineonManufacturers Part No.: IRFB4410ZPBF |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 97A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 230W |
| Typical Gate Charge Qg @ Vgs | 83nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Operates in N-channel enhancement mode with a 3-pin TO-220 package suitable for through-hole mounting.
- Maximum drain-source voltage of 100 V and continuous drain current of 97 A support heavy-load operation.
- Low Rds(on) of 9 milliohms reduces conduction losses during use.
- Typical total gate charge is 83 nanocoulombs ensuring efficient switching performance.
- Maximum power dissipation rating of 230 W allows sustained high-power applications.
- Wide operating temperature range from -55 °C to 175 °C enables use in varied thermal environments.
- Forward conduction voltage of 1.3 V affects power loss calculations.
- Designed for industrial motor drives, DC-DC converters, telecom power, and battery management systems.
Product Description
Infineon IRFB4410ZPBF HEXFET N-channel MOSFET is a high-power electronic component tailored for applications requiring robust power handling, efficient switching, and reliable performance in industrial and commercial environments. It features a 100 V maximum drain-source voltage and supports a continuous drain current of 97 A, making it suitable for demanding power electronics tasks.
This MOSFET operates in enhancement mode and is housed in a 3-pin TO-220 package, designed for through-hole mounting on printed circuit boards and easy attachment to heat sinks for thermal management. The device's low on-resistance of 9 milliohms minimizes conduction losses, contributing to overall efficiency in power switching applications.
The typical gate charge of 83 nC at the standard gate voltage ensures predictable switching energy, allowing designers to optimize gate-drive circuits for desired switching speeds and minimize energy loss. With a power dissipation capability of 230 W, this MOSFET can sustain high-power workloads efficiently.
Its wide operating temperature range from -55 °C to 175 °C permits deployment in varied ambient and junction temperature scenarios, which suits rigorous industrial and laboratory conditions. The forward conduction voltage of 1.3 V should be considered in power budget calculations.
Applications include industrial motor drive inverters, high-current DC-DC converters, telecommunications and server power supplies, as well as battery management and charging systems. Its design supports prototyping and development in laboratory power electronics.
Operates at 100 V, 97 A continuous current, enhancement mode N-channel MOSFET. TO-220 through-hole package for reliable mounting and thermal handling. Low Rds(on) of 9 mΩ reduces conduction losses. Typical total gate charge of 83 nC enables efficient switching.
230 W maximum power dissipation supports sustained high power usage. Wide temperature range from -55 °C to 175 °C. Forward voltage of 1.3 V important for conduction loss considerations. Ideal for industrial, laboratory, telecom, and battery applications.
Explore more industrial electronic components and MOSFET devices at EnvMart to find parts suited for diverse power switching and management needs.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 100 V.
It supports a continuous drain current of 97 A.
This unit is housed in a TO-220 package, which is suitable for through-hole mounting.
The low on-resistance (Rds(on)) is 9 milliohms, which helps reduce conduction losses.
The typical total gate charge is 83 nanocoulombs, ensuring efficient switching performance.
The maximum power dissipation rating for this MOSFET is 230 W, allowing for sustained high-power applications.
It operates within a wide temperature range from -55 °C to 175 °C.
The forward conduction voltage is 1.3 V, which is important for power loss calculations.
This model has a pin count of 3.
It features an N-channel design and operates in enhancement mode.
It is designed for applications such as industrial motor drives, DC-DC converters, telecom power, and battery management systems.
The maximum gate-source voltage is rated at -20 V to +20 V.
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