Infineon HEXFET N-Channel MOSFET 290 A 100 V 3-Pin TO-247 IRFP4468PBF

Infineon IRFP4468PBF HEXFET N-Channel MOSFET delivers robust performance for high current switching applications with a maximum drain current rating of 290 A and a drain-source voltage rating of 100 V. It is designed to provide high efficiency and reliability in motor control and AC-DC synchronous rectifier roles.

This device comes in a TO-247 3-pin through-hole package, facilitating easy mounting and thermal management. Its low on-resistance of 3 mΩ reduces heat generation, allowing it to dissipate up to 520 W of power efficiently, maintaining operation between temperatures -55°C to 175°C.

The MOSFET's gate charge of 360 nC and gate-source voltage tolerance of ±20 V provide fast switching and robust gate control, enhancing performance in demanding electronic environments. The forward voltage drop of 1.3 V aids in minimizing conduction losses.

Its compact form factor with dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width supports compact circuit layout in industrial and commercial electronics applications.

This MOSFET is highly suited for motor control applications requiring efficient power management. The device also supports synchronous rectification in AC-DC power supplies for enhanced power density and efficiency. Its rugged design ensures reliable operation in harsh industrial settings.

Maintains high efficiency in power electronics and semiconductor manufacturing processes. Through-hole mounting style ensures compatibility with standard PCB assembly methods.

Infineon's portfolio includes this MOSFET among their CoolMOS and OptiMOS families which uphold rigorous industry standards and performance benchmarks for discrete semiconductor devices.

Explore the Electronics & Electricals catalog at EnvMart for a comprehensive selection of MOSFETs and other semiconductors designed for robust industrial and commercial applications.