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Infineon HEXFET N-Channel MOSFET 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.02mm |
| Length | 10.66mm |
| Model | IRFB4020PBF |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 688-6939Brand: InfineonManufacturers Part No.: IRFB4020PBFDistrelec Article No.: 304-43-452 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Supports 18 A continuous drain current for significant load handling.
- Capable of withstanding 200 V maximum drain-source voltage for high-voltage applications.
- Features a low 100 mΩ drain-source on-resistance to reduce power losses.
- Efficient power dissipation rated at 100 W to handle elevated thermal loads.
- Typical gate charge of 18 nC ensuring fast switching performance.
- Wide operating temperature range from -55 °C to 175 °C for harsh environments.
- Robust TO-220 through-hole package allows easy mounting and heatsink attachment.
- Forward voltage drop of 1.3 V minimizes diode conduction loss during switching.
Product Description
Infineon IRFB4020PBF HEXFET N-Channel MOSFET is designed for high-voltage and high-current power switching applications requiring robust thermal endurance. Rated at 200 V maximum drain-source voltage and 18 A maximum continuous drain current, it supports demanding load currents with effective power management.
This enhancement mode MOSFET in a TO-220 through-hole package includes a low on-resistance of 100 mΩ to minimize conduction losses and a maximum power dissipation of 100 W, making it suitable for high power applications. Its typical gate charge of 18 nC ensures fast switching speeds, reducing switching losses in power conversion circuits.
Operating reliably from -55 °C to 175 °C, it is ideal for environments with wide thermal variations. The TO-220 package design allows for through-hole mounting and easy heatsink installation, benefiting thermal management in industrial and laboratory settings.
With a forward voltage drop of 1.3 V across its intrinsic diode, designers should consider the diode conduction drop in reverse-recovery switching topologies to ensure efficient energy management. The gate-source voltage limits of ±20 V must be observed to protect the gate oxide for reliable operation.
This MOSFET is commonly applied in motor-drive half-bridge stages, offline switch-mode power supplies, power converters requiring through-hole mounting, high-voltage relay and solenoid drivers, and experimental laboratory prototypes. It provides a durable and practical component for electronic power management and industrial control circuits.
Supports 18 A continuous load currents with high reliability. 200 V drain voltage rating for varied high-voltage circuits. Efficient heat handling due to 100 W power dissipation capacity. Low 100 mΩ on-resistance reduces conduction power loss.
Fast switching with typical 18 nC gate charge. Wide -55 °C to 175 °C operating temperature range. Robust TO-220 package for simple mounting and thermal management. 1.3 V forward diode voltage drop minimizes conduction losses.
Discover more electronic components like the Infineon IRFB4020PBF in the MOSFETs category at EnvMart for your power electronics and industrial applications.
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Frequently Asked Questions
The Infineon IRFB4020PBF supports a maximum continuous drain current of 18 A.
This model has a maximum drain-source voltage rating of 200 V, suitable for high-voltage applications.
It features a low drain-source on-resistance of 100 mΩ, which helps reduce power losses during operation.
The maximum power dissipation capacity is rated at 100 W, allowing it to handle elevated thermal loads effectively.
The typical gate charge is 18 nC, ensuring fast switching performance in power applications.
It operates reliably within a wide temperature range from -55 °C to 175 °C, making it suitable for harsh environments.
The IRFB4020PBF is housed in a robust TO-220 through-hole package, which facilitates easy mounting and heatsink attachment.
The forward voltage drop across its intrinsic diode is 1.3 V, which minimizes conduction losses during switching.
The maximum gate-source voltage limits are ±20 V, which must be observed to protect the gate oxide.
This MOSFET is commonly applied in motor-drive half-bridge stages, offline switch-mode power supplies, and high-voltage relay drivers.
The dimensions of this model are 9.02 mm in height, 10.66 mm in length, and 4.82 mm in width.
This model features a pin count of 3, suitable for various circuit configurations.
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