onsemi Darlington Transistor NPN, 8 A, 100 V, HFE 100, 3-Pin DPAK MJD122G

onsemi MJD122G Darlington Transistor NPN is engineered for robust performance in electronic and industrial applications requiring high current capacity and voltage tolerance. It supports a continuous collector current of 8 A and can withstand collector-emitter voltages up to 100 V.

Featuring a compact 3-Pin DPAK TO-252 surface mount package, this transistor facilitates efficient PCB space utilization and thermal management with a maximum power dissipation of 20 W. The device operates across a wide temperature range from -65°C to 150°C, ensuring dependability in harsh environments.

This transistor exhibits a minimum DC current gain (hFE) of 100, enabling effective current amplification. Its electrical characteristics include a maximum collector cutoff current of 0.01 mA and a maximum collector emitter saturation voltage of 2 V, providing low power loss and efficient switching.

Designed for NPN polarity, this Darlington pair is suitable for discrete semiconductor applications such as power amplification, switching circuits, and automotive electronics. Compliance with the AEC-Q101 automotive standard ensures quality and reliability under automotive conditions.

Supports a maximum power dissipation of 20 W. Minimum DC current gain (hFE) of 100. Wide operating temperature range from -65°C to 150°C. Compact TO-252 (3-Pin DPAK) surface mount package. Automotive AEC-Q101 qualification.

NPN transistor polarity for circuit versatility. Maximum collector cutoff current of 0.01 mA. Maximum emitter base voltage of 5 V. Maximum collector emitter saturation voltage of 2 V.

This product is highly suitable for industrial, automotive, and power electronics manufacturing where high reliability and efficient transistor performance are critical. EnvMart offers this high-quality semiconductor component for your advanced electronic designs and production requirements.