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STMicroelectronics STripFET II N-Channel MOSFET 80 A, 100 V Enhancement 3-Pin TO-220 STP80NF10FP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP80NF10FP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 80A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 135nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET offers ultra-low gate charge for efficient switching performance.
- Designed as an enhancement mode transistor for reliable operation.
- Maximum power dissipation rated at 45 W suitable for power management applications.
- Operates over a wide temperature range from -55°C to 175°C.
- Compact dimensions with a length of 10.4 mm, width of 4.6 mm, and height of 9.3 mm.
- Through-hole mounting ensures sturdy and easy PCB integration.
- Features low on-resistance of 15 mΩ for reduced conduction losses.
- Typical gate charge of 135 nC enables fast switching speeds.
Product Description
STMicroelectronics STP80NF10FP is a high-performance N-Channel MOSFET from the STripFET II series designed for robust power management and switching applications. Featuring a continuous drain current of 80 A and a drain-source voltage rating of 100 V, this device is housed in a durable 3-pin TO-220 package suitable for through-hole mounting.
This enhancement-mode MOSFET provides an ultra-low gate charge of 135 nC which facilitates efficient high-speed switching and reduced switching losses. The device operates reliably across a broad temperature range, from -55°C to 175°C, making it suitable for both industrial and automotive environments.
With a maximum power dissipation of 45 W and a low on-resistance of 15 mΩ, the STP80NF10FP supports high-efficiency power conversion and management tasks. It also features a maximum gate-source voltage of ±20 V and a forward voltage of 1.3 V, ensuring excellent control during transistor switching.
This MOSFET is ideal for applications in industrial power supplies, motor control circuits, and DC-DC converters. Its through-hole mount type offers mechanical stability and ease of integration in circuit designs. Compact physical dimensions (10.4 mm length, 4.6 mm width, 9.3 mm height) enable space-efficient layouts.
The device complies with standard electronic component requirements but does not carry specific automotive or industry certifications.
Choose STMicroelectronics STP80NF10FP for reliable, high-current switching in demanding electronic applications. Browse the Electronics & Electricals category on EnvMart for a wide range of discrete semiconductor components and MOSFETs optimized for your industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for the STMicroelectronics STP80NF10FP is 80 A.
This MOSFET has a drain-source voltage rating of 100 V.
The maximum power dissipation rated for this model is 45 W.
The typical gate charge for the STP80NF10FP is 135 nC.
The dimensions of the STMicroelectronics STP80NF10FP are 10.4 mm in length, 4.6 mm in width, and 9.3 mm in height.
This MOSFET features a low on-resistance of 15 mΩ.
The STP80NF10FP operates over a wide temperature range from -55°C to 175°C.
This model utilizes through-hole mounting for easy PCB integration.
The STMicroelectronics STP80NF10FP is housed in a TO-220 package type.
The maximum gate-source voltage for this model is ±20 V.
This MOSFET is ideal for applications in industrial power supplies, motor control circuits, and DC-DC converters.
The STP80NF10FP belongs to the STripFET II series.
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