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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 15A 900V Enhancement 3-Pin TO-247 STW15NK90Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW15NK90Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 900V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350W |
| Typical Gate Charge Qg @ Vgs | 190nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET device is housed in a TO-247 package with 3 pins allowing through-hole mounting.
- The MDmesh SuperMESH series offers enhancement mode operation suitable for switching circuits.
- It features a maximum power dissipation of 350W for reliable thermal handling.
- Low maximum drain-source resistance of 550 milliohms ensures efficiency and reduced losses.
- Operating temperature range from -55°C to 150°C enables use in harsh environments.
- Gate charge typical value of 190 nanocoulombs facilitates fast switching performance.
- Maximum gate-source voltage ratings are ±30V providing robust gate protection.
- Its compact dimensions measure 15.75mm length, 20.15mm height, and 5.15mm width for flexible PCB integration.
Product Description
STMicroelectronics STW15NK90Z MDmesh SuperMESH N-Channel MOSFET is designed for power switching and amplification in industrial and electronic applications. Operating at a maximum continuous drain current of 15A and a high drain-source voltage of 900V, this enhancement mode MOSFET offers efficient and reliable performance with low resistance of 550 milliohms. It comes in a robust TO-247 3-pin through-hole package ensuring ease of assembly and excellent heat dissipation.
This MOSFET supports a maximum power dissipation of 350 watts, making it suitable for demanding applications in power converters, motor drives, and switching power supplies. Its wide operating temperature range from -55°C to +150°C enables it to function reliably in harsh industrial environments.
The device features a typical forward voltage of 1.6V and a typical gate charge of 190nC at Vgs, permitting rapid switching speeds to optimize energy efficiency. The maximum gate-source voltage of ±30V provides strong protection for gate integrity during operation.
With a compact form factor measuring 15.75mm length, 20.15mm height, and 5.15mm width, integration on printed circuit boards is straightforward for designers requiring space-efficient power components. The MDmesh SuperMESH series is specifically engineered by STMicroelectronics for high-performance power management applications.
This MOSFET device is housed in a TO-247 package with 3 pins allowing through-hole mounting. The MDmesh SuperMESH series offers enhancement mode operation suitable for switching circuits. It features a maximum power dissipation of 350W for reliable thermal handling.
Low maximum drain-source resistance of 550 milliohms ensures efficiency and reduced losses. Operating temperature range from -55°C to 150°C enables use in harsh environments. Gate charge typical value of 190 nanocoulombs facilitates fast switching performance.
Maximum gate-source voltage ratings are ±30V providing robust gate protection. Compact dimensions enable versatile PCB integration.
This product is ideal for industrial power control, electronic assembly, and laboratory testing environments requiring durable and high-efficiency MOSFET devices. STMicroelectronics' MDmesh SuperMESH series continues to support innovation for engineers working with power electronics and embedded systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15A.
This MOSFET has a maximum drain-source voltage rating of 900V.
It features a maximum power dissipation of 350W.
The maximum drain-source resistance is 550 milliohms.
The typical gate charge at Vgs is 190 nanocoulombs.
The operating temperature range is from -55°C to +150°C.
This model is housed in a TO-247 package with 3 pins for through-hole mounting.
The typical forward voltage is 1.6V.
The dimensions are 15.75mm in length, 20.15mm in height, and 5.15mm in width.
It features an N-channel configuration.
The maximum gate-source voltage ratings are ±30V.
This MOSFET belongs to the MDmesh SuperMESH series.
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