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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800 V, 5.2 A, 125 W, TO-220 Package STP7NK80Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP7NK80Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.2A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.8Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- High voltage capability with maximum drain-source voltage of 800 V.
- Continuous drain current rating up to 5.2 A for reliable power handling.
- Low drain-source resistance of 1.8 ohms minimizes conduction losses.
- Designed with MDmesh SuperMESH technology for enhanced switching performance.
- Compact TO-220 package with 3 pins suitable for through-hole mounting.
- Maximum power dissipation of 125 W supports demanding applications.
- Wide operating temperature range from -55°C to 150°C.
- Typical gate charge of 40 nC ensures efficient drive capability.
Product Description
STMicroelectronics STP7NK80Z is an N-Channel Enhancement Mode MOSFET featuring MDmesh SuperMESH technology, delivering superior performance for power switching applications. It supports a maximum drain-source voltage of 800 V and continuous drain current of 5.2 A, making it ideal for industrial and electronic power control circuits. The transistor is housed in a 3-pin TO-220 package suitable for through-hole mounting, providing effortless integration into existing designs.
This MOSFET offers a low drain-source resistance of 1.8 ohms to reduce power losses during operation, ensuring enhanced efficiency. With a maximum power dissipation rating of 125 W, it can handle significant power loads in demanding environments.
The device operates reliably across a wide temperature range from -55°C to 150°C, accommodating harsh industrial and automotive conditions. Typical gate charge of 40 nC enables fast and efficient switching, while the maximum gate-source voltage of -30 V to +30 V protects the device against over-voltage conditions on the gate terminal.
The STP7NK80Z has a forward voltage drop of 1.6 V, contributing to lower conduction losses at rated current. Dimensions are compact with a height of 9.15 mm, length of 10.4 mm, and width of 4.6 mm, permitting space-efficient layouts.
High-voltage N-Channel MOSFET designed for power electronics and switching applications. Utilizes MDmesh SuperMESH technology for improved thermal and electrical performance. Robust in operation with wide temperature tolerance and power dissipation capability.
Compact TO-220 package supports through-hole assembly and effective heat dissipation. Ideal for use in industrial, HVAC, manufacturing, and power conversion equipment. Features low gate charge for efficient gate drive and switching speed.
Reliable device construction that meets standard semiconductor industrial requirements. Includes necessary approvals; however, no specific automotive standard certification.
Explore more STMicroelectronics MOSFETs and other semiconductor solutions in the Electronics & Electricals category at EnvMart for industrial, laboratory, and manufacturing applications.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 800 V.
It has a continuous drain current rating of up to 5.2 A.
This model is housed in a TO-220 package suitable for through-hole mounting.
The typical gate charge is 40 nC, which allows for efficient drive capability.
It supports a maximum power dissipation of 125 W, suitable for demanding applications.
The low drain-source resistance is 1.8 ohms, minimizing conduction losses.
The operating temperature range is from -55°C to 150°C.
The dimensions are 9.15 mm in height, 10.4 mm in length, and 4.6 mm in width.
The maximum gate-source voltage is -30 V to +30 V, providing protection against over-voltage conditions.
It is designed for power electronics and switching applications, including industrial and HVAC systems.
The forward voltage drop is 1.6 V, which contributes to lower conduction losses at rated current.
This model features an N-Channel enhancement mode.
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