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STMicroelectronics STripFET F3 N-Channel MOSFET, 120A, 75V, 3-Pin TO-263 Package STB140NF75T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STB140NF75T4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | STripFET F3 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 120A |
| Maximum Drain Source Voltage Vds | 75V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for surface mount applications.
- Provides ultra-low gate charge and low on-resistance.
- Operating temperature range from -55°C to 175°C.
- Maximum power dissipation of 310W.
- Typical gate charge of 160nC at Vgs.
- Low forward voltage of 1.5V.
- Maximum gate-source voltage rating of -20V to +20V.
- Ideal for power switching and motor control applications.
Product Description
STMicroelectronics STB140NF75T4 is a high-performance STripFET F3 N-Channel MOSFET designed for advanced power management applications in industrial, automotive, and electronic equipment. It features a maximum continuous drain current of 120A and a drain-source voltage rating of 75V, making it suitable for switching high currents and voltages efficiently.
Its package type is TO-263 with 3 pins, designed for surface mount technology, allowing compact PCB layouts and reliable electrical connections.
The device boasts ultra-low gate charge and very low on-resistance, which helps reduce switching losses and improve overall system efficiency. This MOSFET operates safely in temperatures ranging from -55°C up to 175°C and can dissipate power up to 310W, making it robust for demanding environments.
The maximum gate-source voltage extends from -20V to +20V, allowing for a wide control range. A typical gate charge of 160nC reduces the driving power requirements. Its low forward voltage drop of 1.5V enhances conduction efficiency.
Physical dimensions include a length of 10.4mm, width of 9.35mm, and height of 4.6mm, suitable for compact electronic designs. Designed for efficient power switching with low losses. High current and voltage handling capability supports a wide range of industrial applications.
High-temperature tolerance suitable for harsh operating environments. Low gate charge reduces driver power consumption. Compact TO-263 package enables space-saving PCB layouts. Ideal for use in power supplies, motor drivers, and industrial automation systems.
Reliable surface mount package for efficient assembly. STripFET™ F3 series technology ensures robust electro-thermal performance.
This N-Channel MOSFET from STMicroelectronics is a reliable choice for applications requiring high efficiency, reliability, and compact design. It is widely used in electronic, manufacturing, HVAC, automotive, and industrial control sectors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 120A.
The maximum drain-source voltage rating is 75V.
The typical gate charge at Vgs is 160nC.
The maximum power dissipation is 310W.
The dimensions of the TO-263 package are 10.4mm in length, 9.35mm in width, and 4.6mm in height.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage rating is -20V to +20V.
This model supports surface mount technology.
The forward voltage drop is 1.5V.
The TO-263 package has 3 pins.
This MOSFET belongs to the STripFET F3 series.
This model is typically used in power supplies, motor drivers, and industrial automation systems.
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