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onsemi QFET N-Channel MOSFET 8 A 1 kV Enhancement 3-Pin TO-3PN FQA8N100C
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | onsemi |
| Height | 18.9mm |
| Length | 15.8mm |
| Model | FQA8N100C |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 1.45Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 225W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Maximum continuous drain current of 8 A supports medium power applications.
- High voltage capability with 1 kV maximum drain source voltage.
- Low typical gate charge of 53 nC reduces switching losses.
- Maximum power dissipation of 225 W allows effective thermal management.
- Wide operating temperature range from -55°C to 150°C for versatile use.
- TO-3PN 3-pin package enables reliable through-hole mounting.
- Maximum drain source resistance of 1.45 Ω minimizes conduction losses.
- Gate source voltage rating from -30 V to +30 V ensures gate safety.
Product Description
onsemi FQA8N100C is a QFET® N-Channel Enhancement mode MOSFET designed for efficient power control and switching applications in industrial, consumer electronics, and power management systems. It supports a maximum continuous drain current of 8 amperes and withstands drain source voltages up to 1 kilovolt, making it suitable for high-voltage power supplies, DC-DC converters, lighting ballasts, and motion control circuits.
This MOSFET features advanced QFET technology, providing low on-resistance (Rds(on)) and minimal gate charge (Qg), which together reduce conduction and switching losses, improving overall system efficiency. The device's gate can tolerate voltages from -30 volts to +30 volts to ensure safe operation and durability.
The FQA8N100C is packaged in a TO-3PN 3-pin through-hole format, facilitating easy mounting and reliable mechanical stability on PCB assemblies. It operates effectively in a wide temperature range from -55°C to 150°C, supporting diverse environmental conditions.
Dimensionally, the device measures 18.9 mm in height, 15.8 mm in length, and 5 mm in width, compact for integration into constrained spaces. Additionally, its power dissipation rating is 225 watts, enabling it to handle significant power levels with adequate heat sinking.
Maximum continuous drain current: 8 A. Drain source voltage: 1 kV maximum. Gate charge typical: 53 nC. Power dissipation: 225 W maximum. Operating temperature range: -55°C to 150°C. Package: TO-3PN, 3 pins, through hole mount.
Drain source resistance (Rds): 1.45 Ω maximum. Gate source voltage rating: -30 V to +30 V. Dimensions: H 18.9 mm, L 15.8 mm, W 5 mm. Country of origin: Malaysia.
This semiconductor device is optimized for applications requiring efficient power switching with high voltage and current capabilities. Typical use cases include power factor correction circuits, DC-DC converters, display panel driving, and various industrial control systems.
Explore related power and Discrete Semiconductor components within the onsemi product catalog to meet diverse design and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
It can withstand a maximum drain source voltage of 1 kV.
The typical gate charge is 53 nC, which helps reduce switching losses.
The maximum power dissipation for this device is 225 W, allowing for effective thermal management.
It operates effectively within a temperature range of -55°C to 150°C.
This model is packaged in a TO-3PN 3-pin format, designed for through-hole mounting.
The maximum drain source resistance (Rds) is 1.45 Ω, which minimizes conduction losses.
The gate source voltage rating ranges from -30 V to +30 V, ensuring gate safety.
The dimensions are 18.9 mm in height, 15.8 mm in length, and 5 mm in width.
This MOSFET is suitable for applications such as power factor correction circuits, DC-DC converters, and industrial control systems.
The channel type of this model is N-Channel, designed for enhancement mode operation.
The country of origin for this device is Malaysia.
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