onsemi PowerTrench N-Channel Power MOSFET 150 V, 79 A, TO-220AB Package FDP2532

onsemi FDP2532 PowerTrench N-Channel Power MOSFET is designed for high-performance switching in industrial, automotive, and power management applications. It features a maximum continuous drain current of 79 A and a maximum drain-source voltage of 150 V, suited for demanding power switching tasks.

Packaged in the 3-pin TO-220AB form factor, this device supports both through-hole and surface mount mounting, offering flexibility in PCB assembly. Its low maximum drain-source resistance (Rds) of 0.016 Ω ensures minimal conduction losses, improving overall efficiency.

The MOSFET operates in enhancement mode with an N-Channel type, compatible with standard gate drive voltages up to ±20 V, enabling precise switching control. It can dissipate power up to 310 W making it suitable for high-power applications.

Engineered for rugged environments, the FDP2532 MOSFET supports a wide operating temperature range of -55°C to 175°C, meeting industrial and automotive standards though it has no specific automotive certification.

Physical dimensions include a length of 10.67 mm, height of 9.4 mm, and width of 4.83 mm, facilitating integration in varied hardware designs. The typical gate charge is 82 nC at Vgs, contributing to fast switching performance.

High maximum continuous drain current of 79 A suitable for power switching applications. Rated for 150 V maximum drain-source voltage ensuring robust operation. TO-220AB through-hole and surface mount package for versatile installation options.

Low maximum drain-source resistance of 0.016 Ω for efficient conduction. Enhancement type channel mode with N-Channel configuration. Maximum gate-source voltage ±20 V supporting standard drive signals. Maximum power dissipation of 310 W for high power handling capability.

Wide operating temperature range from -55°C to 175°C for industrial environments. Physical dimensions approximately 10.67 mm length, 9.4 mm height, and 4.83 mm width. Typical gate charge of 82 nC at nominal gate drive voltage for switching efficiency.

This product is ideal for applications in industrial electronics, automotive electronics, power supplies, and general power management circuits. It forms an essential component in designs requiring efficient switching and high power handling.

Explore the onsemi range and related Power MOSFETs on EnvMart for reliable components suited to demanding electronic projects and commercial production.