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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS8984 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 23mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 9.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
onsemi FDS8984 Isolated PowerTrench 2 N-Channel Power MOSFET, model FDS8984, rated 7 A continuous drain current and 30 V maximum drain-source voltage, is designed for efficient power management in electronic circuits.
This device belongs to the PowerTrench series and utilizes an enhancement mode isolated transistor configuration. It features a low maximum drain-source resistance of 23 mΩ which ensures reduced power losses and high switching efficiency.
The MOSFET is housed in a compact 8-pin SOIC surface mount package with physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height, facilitating integration in densely packed PCBs.
It operates reliably under extreme environmental conditions with a temperature rating from -55°C to +150°C, suitable for industrial, automotive electronics, and power supply applications. The device dissipates a maximum power of 1.6 W and features a typical gate charge of 9.2 nC at specified gate-source voltage, enabling fast switching speeds.
The maximum gate-source voltage rating of -20 V to +20 V allows flexibility in gate drive circuits, enhancing overall circuit robustness. The chip contains 2 elements, ideal for dual MOSFET needs in power electronics.
This MOSFET does not conform to specific automotive standards but is engineered with reliability and quality consistent with onsemi's industry leadership. This MOSFET features an enhancement mode with a low 23 mΩ maximum drain-source resistance for efficient switching.
Operates reliably over a wide temperature range from -55°C to +150°C for industrial applications. Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height are suitable for surface mounting. Maximum power dissipation rating is 1.6 W, appropriate for low power electronic circuits.
Typical gate charge is 9.2 nC at the gate-source voltage, ensuring fast switching capability. Maximum gate-source voltage tolerates -20 V to +20 V for flexible driving conditions. Contains 2 elements per chip, optimizing performance in automotive and general electronics.
Ideal for use in power supplies, industrial electronics, consumer appliances, and automotive electronic systems requiring reliable and efficient power switching. Explore the broad range of Power MOSFETs and semiconductor components at EnvMart for your electronic assembly needs.
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