Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
24/7 Customer Support

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

24/7 Customer Support
Save up to 28% with GST Input

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

Lowest Price Challenge
# Lowest Price Challenge

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Lowest Price Challenge
100% Original Products

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase

onsemi Isolated PowerTrench 2 N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS8984

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 5mm
Model FDS8984
Width 4mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type N
Maximum Continuous Drain Current Id 7A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 23mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.6W
Typical Gate Charge Qg @ Vgs 9.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Transistor Configuration Isolated

Key Features

  • This MOSFET features an enhancement mode with a low 23 mΩ maximum drain-source resistance for efficient switching.
  • Operates reliably over a wide temperature range from -55°C to +150°C for industrial applications.
  • Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height are suitable for surface mounting.
  • Maximum power dissipation rating is 1.6 W, appropriate for low power electronic circuits.
  • Typical gate charge is 9.2 nC at the gate-source voltage, ensuring fast switching capability.
  • Maximum gate-source voltage tolerates -20 V to +20 V for flexible driving conditions.
  • Contains 2 elements per chip, optimizing performance in automotive and general electronics.

Product Description

onsemi FDS8984 Isolated PowerTrench 2 N-Channel Power MOSFET, model FDS8984, rated 7 A continuous drain current and 30 V maximum drain-source voltage, is designed for efficient power management in electronic circuits.

This device belongs to the PowerTrench series and utilizes an enhancement mode isolated transistor configuration. It features a low maximum drain-source resistance of 23 mΩ which ensures reduced power losses and high switching efficiency.

The MOSFET is housed in a compact 8-pin SOIC surface mount package with physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height, facilitating integration in densely packed PCBs.

It operates reliably under extreme environmental conditions with a temperature rating from -55°C to +150°C, suitable for industrial, automotive electronics, and power supply applications. The device dissipates a maximum power of 1.6 W and features a typical gate charge of 9.2 nC at specified gate-source voltage, enabling fast switching speeds.

The maximum gate-source voltage rating of -20 V to +20 V allows flexibility in gate drive circuits, enhancing overall circuit robustness. The chip contains 2 elements, ideal for dual MOSFET needs in power electronics.

This MOSFET does not conform to specific automotive standards but is engineered with reliability and quality consistent with onsemi's industry leadership. This MOSFET features an enhancement mode with a low 23 mΩ maximum drain-source resistance for efficient switching.

Operates reliably over a wide temperature range from -55°C to +150°C for industrial applications. Compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height are suitable for surface mounting. Maximum power dissipation rating is 1.6 W, appropriate for low power electronic circuits.

Typical gate charge is 9.2 nC at the gate-source voltage, ensuring fast switching capability. Maximum gate-source voltage tolerates -20 V to +20 V for flexible driving conditions. Contains 2 elements per chip, optimizing performance in automotive and general electronics.

Ideal for use in power supplies, industrial electronics, consumer appliances, and automotive electronic systems requiring reliable and efficient power switching. Explore the broad range of Power MOSFETs and semiconductor components at EnvMart for your electronic assembly needs.

onsemi Isolated PowerTrench 2 N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS8984
Looking to purchase in bulk?
  • Purchase item in bulk quantity
  • Get best price for your business

Comments (0)

No customer reviews for the moment.

Frequently Asked Questions

The maximum continuous drain current for this model is 7 A.

The maximum drain-source voltage rating is 30 V.

The maximum power dissipation rating is 1.6 W.

This model has dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.

The typical gate charge at the specified gate-source voltage is 9.2 nC.

The maximum gate-source voltage tolerates -20 V to +20 V.

It operates reliably over a temperature range from -55°C to +150°C.

Each chip contains 2 elements.

This model supports surface mounting.

It belongs to the PowerTrench series.

This MOSFET is an N-channel type.

It utilizes an isolated transistor configuration.

Related Products

$0.46
$0.44 Save 3%
Tax included
Quantity
Delivery Time Delivered within 0-3 days
  • Global Payments 140+ CountriesGlobal Payments 140+ Countries
  • Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP WorldGlobal Shipping Fedex/UPS/DHL/Aramex/ BlueDart/Delhivery/DP World
  • 24/7 Customer Support Email/Chat/Telephonic Support24/7 Customer Support Email/Chat/Telephonic Support
$0.46
$0.44
Tax included