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onsemi PowerTrench Type P-Channel MOSFET Surface Mount 30 V 5.3 A 8-Pin SOIC FDS9435A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS9435A |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 50mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET features an enhancement channel mode for advanced switching performance.
- Maximum drain-source resistance is 50 milliohms, ensuring low conduction losses.
- It supports maximum power dissipation of 2.5 W for reliable operation in various conditions.
- The device operates within a temperature range of -55°C to 175°C for enhanced durability.
- Equipped with a typical gate charge of 10 nC for efficient switching.
- Supplied in a compact 8-pin SOIC package with dimensions 5 mm length, 4 mm width, and 1.5 mm height.
- Soft reverse recovery body diode enhances fast switching and eliminates the need for snubber circuits.
- The MOSFET is suited for use in power management and synchronous rectification applications.
Product Description
onsemi FDS9435A is a PowerTrench Type P-Channel MOSFET designed for effective power switching applications. It delivers a maximum continuous drain current of 5.3 A with a drain-source voltage rating of 30 V, housed in an 8-pin SOIC surface mount package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
This enhancement mode MOSFET is optimized for system efficiency and power density. It features a low typical gate charge of 10 nC and a maximum drain-source resistance of 50 milliohms, which minimize conduction losses and improve switching speeds.
The device supports high maximum operating temperatures up to 175°C and minimum operating temperatures down to -55°C, ensuring reliable performance in a wide range of environments. Its soft reverse recovery body diode reduces electromagnetic interference and allows elimination of snubber circuits, enhancing circuit simplicity and efficiency.
The FDS9435A is ideal for applications involving synchronous rectification in AC/DC power supplies, DC/DC converters, and other power management systems in industrial, automotive, and consumer electronics sectors. Its surface mount configuration facilitates automated assembly and high-density PCB designs.
The MOSFET offers excellent switching characteristics suitable for fast switching requirements. PowerTrench technology provides a shielded-gate structure for improved charge balance and lower figure of merit (FOM). Typical forward voltage is -1.2 V ensuring efficient conduction in load conditions.
This device lacks automotive-specific certifications but meets general semiconductor standards suitable for many commercial applications. Package and pin configuration support straightforward integration into diverse electronic systems.
Explore onsemi’s wide portfolio of MOSFETs for advanced power management solutions at EnvMart. Enhance your designs with reliable semiconductor components precisely matched to your technical requirements.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.3 A.
This MOSFET has a maximum drain-source voltage rating of 30 V.
The typical gate charge for the FDS9435A is 10 nC.
The dimensions of this model are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum power dissipation supported by the FDS9435A is 2.5 W.
This model operates within a temperature range of -55°C to 175°C.
The device is supplied in an 8-pin SOIC package.
The maximum drain-source resistance for the FDS9435A is 50 milliohms.
This MOSFET is suited for power management and synchronous rectification applications.
The channel type of this MOSFET is P-Channel.
The typical forward voltage for the FDS9435A is -1.2 V.
This model utilizes PowerTrench technology for improved performance.
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