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DiodesZetex High Power NPN Transistor 3.5 A 300 V 4-Pin SOT-223 FZT857TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.55mm
Model FZT857TA
Width 7.1mm
Mount Type Surface
Series FZT857
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 15
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 350V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3W
Maximum DC Collector Current Idc 3.5A
Transistor Configuration Single
Maximum Transition Frequency ft 80MHz

Key Features

  • Supports a maximum DC collector current of 3.5 amperes.
  • Maximum collector emitter voltage of 300 volts for high voltage applications.
  • NPN transistor configuration suitable for switching and amplification.
  • Compact 4-pin SOT-223 surface mount package for PCB integration.
  • Maximum power dissipation of 3 watts ensuring reliable thermal performance.
  • Wide operating temperature range from -55°C to 150°C.
  • Maximum transition frequency of 80 MHz allowing moderate frequency operation.
  • Automotive standard compliant with AEC-Q101 certification.

Product Description

DiodesZetex FZT857TA is a high-power bipolar NPN transistor designed for demanding electronic applications requiring reliable switching and amplification. It supports a maximum DC collector current of 3.5 A and can withstand collector emitter voltages up to 300 V. This transistor leverages a 4-pin SOT-223 surface mount package that facilitates compact PCB designs and efficient thermal management.

The transistor operates over a temperature range spanning from -55°C to 150°C and features a maximum power dissipation rating of 3 Watts, making it suitable for automotive and industrial environments. The device also complies with the AEC-Q101 automotive standard, assuring high reliability under rigorous conditions.

With a minimum DC current gain (hFE) of 15 and a maximum transition frequency of 80 MHz, the FZT857TA transistor performs effectively in medium-frequency amplification and switching circuits. The maximum collector base voltage is rated at 350 V and the emitter base voltage at 6 V, providing robust electrical limits for circuit designs.

This transistor is ideal for use in industrial electronics, automotive electronic control units, power management circuits, and general-purpose amplification tasks. Applications include signal switching, motor control, and voltage regulation circuits. The compact form factor and high voltage/current ratings enable designers to create efficient and reliable electronic systems.

Supports a maximum DC collector current of 3.5 amperes. Maximum collector emitter voltage of 300 volts for high voltage applications. NPN transistor configuration suitable for switching and amplification. Compact 4-pin SOT-223 surface mount package for PCB integration.

Maximum power dissipation of 3 watts ensuring reliable thermal performance. Wide operating temperature range from -55°C to 150°C. Maximum transition frequency of 80 MHz allowing moderate frequency operation. Automotive standard compliant with AEC-Q101 certification.

This transistor belongs to the FZT857 series by DiodesZetex and meets automotive-grade quality standards, ensuring dependable operation in commercial and industrial electronic assemblies. For more Bipolar Transistors and related components, explore the Electronics & Electricals category on EnvMart.

DiodesZetex High Power NPN Transistor 3.5 A 300 V 4-Pin SOT-223 FZT857TA
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Frequently Asked Questions

The maximum DC collector current for the FZT857TA is 3.5 amperes.

This model has a maximum collector-emitter voltage rating of 300 volts.

It comes in a compact 4-pin SOT-223 surface mount package.

The operating temperature range for the FZT857TA spans from -55°C to 150°C.

The maximum power dissipation for the FZT857TA is 3 watts.

This transistor has a maximum transition frequency of 80 MHz.

It complies with the AEC-Q101 automotive standard.

The dimensions are 6.55 mm in length, 7.1 mm in width, and 1.8 mm in height.

The minimum DC current gain (hFE) for the FZT857TA is 15.

The maximum collector-base voltage rating is 350 volts.

It is suitable for applications such as signal switching, motor control, and voltage regulation circuits.

The FZT857TA has an NPN transistor configuration, which is suitable for switching and amplification tasks.

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