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Infineon HEXFET P-Channel MOSFET 40A 100V Enhancement Mode 3-Pin TO-220 IRF5210PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF5210PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 180nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| P-channel MOSFET,IRF5210 40A 100VBrand | International Rectifier |
Key Features
- Supports continuous drain current up to 40A for high power applications.
- Maximum drain-source voltage of 100V provides operational reliability.
- Enhancement mode P-Channel design facilitates efficient power control.
- Package type TO-220 with through-hole mount for easy PCB integration.
- Low on-resistance of 60 milliohms enhances energy efficiency and reduces thermal losses.
- Typical gate charge of 180nC ensures fast switching performance.
- Maximum operating temperature of 175°C enables usage in high-temperature environments.
- Robust thermal dissipation capacity with 200W maximum power dissipation.
Product Description
The Infineon IRF5210PBF is a HEXFET Type P-Channel MOSFET designed for high efficiency power management applications. It supports a maximum continuous drain current of 40A and a drain-source voltage rating of 100V, packaged in a TO-220 through-hole configuration. This enhancement mode MOSFET offers a low on-resistance of 60mΩ which minimizes conduction losses and improves thermal management, making it suitable for industrial automation, motor control circuits, DC-DC converters, and other power switching applications.
With a maximum power dissipation of 200W and operating temperature capability up to 175°C, the IRF5210PBF performs reliably in challenging thermal environments. Its typical gate charge of 180nC allows quick switching which is essential for efficient power conversion. The device's forward voltage of -1.6V supports efficient conduction when active.
The package's three-pin TO-220 format is widely compatible for various PCB layouts, ensuring flexibility in circuit configurations including single or parallel arrangements. Proper thermal management using heatsinks is recommended to maintain optimal performance and reliability.
Ideal for use in industrial control systems, automotive power electronics, and peak power handling circuits, the IRF5210PBF delivers robust performance in power MOSFET class applications.
Continuous 40A drain current supports high-load operation. 100V drain-source voltage accommodates varied power system voltages. Enhancement mode facilitates controlled power switching. TO-220 package aids thermal dissipation and mounting ease.
Low Rds(on) reduces power loss and heating. High maximum operating temperature withstands harsh environments. Designed to integrate into versatile circuit configurations. Suitable for automotive and industrial use cases demanding reliability.
Explore more industrial-grade semiconductor components and power MOSFET solutions at EnvMart for your electronics manufacturing and design needs.
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Frequently Asked Questions
The IRF5210PBF supports a maximum continuous drain current of 40A, making it suitable for high power applications.
This model has a maximum drain-source voltage rating of 100V, providing operational reliability for various power systems.
The typical gate charge for the IRF5210PBF is 180nC, which ensures fast switching performance essential for efficient power conversion.
The IRF5210PBF is packaged in a TO-220 format, which is a through-hole mount type for easy PCB integration.
It has a maximum power dissipation of 200W, allowing for robust thermal management in high-load applications.
The maximum operating temperature for this MOSFET is 175°C, enabling its use in high-temperature environments.
The dimensions of this model are 10.54mm in length, 4.69mm in width, and 8.77mm in height.
This model features a low on-resistance of 60 milliohms, which enhances energy efficiency and reduces thermal losses.
It is suitable for industrial automation, motor control circuits, DC-DC converters, and other power switching applications.
The IRF5210PBF is a P-channel MOSFET designed for enhancement mode operation, facilitating efficient power control.
The forward voltage for this model is -1.6V, supporting efficient conduction when the device is active.
The minimum operating temperature for this MOSFET is -55°C, allowing it to function in low-temperature environments.
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