Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement Mode, 3-Pin TO-220 IRF5210PBF

Infineon IRF5210PBF HEXFET Type P-Channel MOSFET is a high-performance semiconductor device designed to handle demanding electrical applications requiring reliable and efficient power management. Featuring a 40 A maximum continuous drain current and 100 V maximum drain-source voltage, it supports a wide range of power switching and motor control usages in industrial automation and electronic systems.

This device utilizes the enhancement channel mode operating in a TO-220 through-hole package with 3 pins, enabling effective heat dissipation and easy assembly onto printed circuit boards. The low on-resistance of 60 mΩ minimizes power loss, thereby improving energy efficiency and thermal management during operation. With a maximum power dissipation rating of 200 W and a maximum operating temperature of 175°C, it is suitable for harsh environments and elevated temperature applications.

Additional features include a typical gate charge of 180 nC for optimized switching speeds, and gate-source voltage limits of -20 V and +20 V for reliable voltage protection. The device’s compact dimensions (10.54 mm length, 8.77 mm height, and 4.69 mm width) allow for flexible integration into various circuit boards.

Typical industrial applications include power switching circuits in automation systems, DC-DC converters requiring efficient voltage regulation, and motor control for precise operation. While automotive standard certifications are not indicated, its high temperature tolerance makes it suitable for robust automotive electronics where reliable power MOSFET behavior is critical.

Supports continuous currents up to 40 A for demanding load requirements. High voltage rating up to 100 V ensures wide application flexibility. Robust construction in TO-220 package enables effective heat management. Enhancement mode P-channel design simplifies circuit configuration.

Low on-resistance reduces power loss and enhances efficiency. Wide operating temperature range from -55°C to +175°C enhances reliability. Typical gate charge optimizes switching performance. Maximum gate-source voltage ratings afford voltage spike protection.

Compact dimensions facilitate circuit board design integration. Explore more high-quality MOSFETs and semiconductor products on EnvMart for varied industrial and technical needs.