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Infineon HEXFET N-Channel MOSFET 9.7 A 100 V Enhancement Mode 3-Pin TO-220 IRF520NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF520NPBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.7A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRF520N 9.5A 100VBrand | International Rectifier |
Key Features
- Supports high continuous drain current of 9.7 amperes suitable for power applications.
- Maximum drain-source voltage of 100 volts ensures robust switching capability.
- Enhancement mode channel design for efficient operation in electronic circuits.
- Low on-resistance of 200 milliohms reduces power loss and heat generation.
- Fast switching speeds enable high frequency applications.
- Maximum power dissipation rating of 48 watts for enhanced thermal performance.
- Wide operating temperature range from -55°C to 175°C for reliability in harsh environments.
- TO-220 package supports through hole mounting for ease of integration.
Product Description
The Infineon IRF520NPBF is a HEXFET N-Channel MOSFET designed for robust power management in electronic circuits. It supports a maximum continuous drain current of 9.7 amperes and can withstand a drain-source voltage of up to 100 volts, making it suitable for demanding automation and switching applications.
Featuring an enhancement mode channel type, this MOSFET offers a low drain-source resistance of 200 milliohms which reduces energy losses and heat generation, thereby improving overall efficiency and reliability under load.
The device is housed in a TO-220 package with through-hole mounting capability and consists of 3 pins, facilitating straightforward installation in various electronic assemblies.
It supports fast switching speeds and has a maximum power dissipation of 48 watts. The typical gate charge of 25 nanocoulombs helps in efficient switching control. It operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and high-frequency electronic applications.
Common applications include power management in automation systems, switching circuits, industrial motor drives, and other electronic devices that require a durable and efficient MOSFET for continuous or pulsed loads.
Supports high continuous current up to 9.7 A. Handles maximum drain-source voltage of 100 V. Low on-resistance minimizes power dissipation. Fast switching suitable for high-frequency environments. Wide operating temperature range for harsh conditions.
Suitable for automation and motor drive circuits. Explore more semiconductor components and power MOSFETs with Infineon precision and reliability at EnvMart for your electronics manufacturing and design needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 9.7 amperes, making it suitable for power applications.
This MOSFET can withstand a maximum drain-source voltage of 100 volts, ensuring robust switching capability.
The on-resistance of this model is 200 milliohms, which helps reduce power loss and heat generation during operation.
It is housed in a TO-220 package and supports through-hole mounting for ease of integration into electronic assemblies.
The maximum power dissipation rating is 48 watts, which enhances thermal performance during operation.
The typical gate charge for this MOSFET is 25 nanocoulombs, aiding in efficient switching control.
It operates reliably across a wide temperature range from -55°C to 175°C, suitable for harsh environments.
This model features a 3-pin configuration, facilitating straightforward installation.
This MOSFET utilizes an enhancement mode N-channel design for efficient operation in electronic circuits.
Common applications include power management in automation systems, switching circuits, and industrial motor drives.
The maximum gate-source voltage is -20 to +20 volts, allowing for flexible control in various applications.
The country of origin for this MOSFET is India.
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